Effect of oxygen assisted sintering on piezoelectric properties of SrBi4Ti4O15 ceramics prepared via high energy mechanochemical processing

Microstructure evolution and dielectric properties of Ce-doped SrBi4Ti4O15 ceramics synthesized via glycine-nitrate process

“…The powder heat-treated at 250°C for 3 h contains SrTiO 3 , Bi 4 Ti 3 O 12 and other unknown phases, which are in accordance with the intermediary products of redox reactions. It was also shown that the SBT layeredperovskite phases were formed after calcining at 400°C and the temperature is much lower than with the conventional solid state processes (800-900°C) [4,17]. Thus, the appropriate conditions for preparation of SrBi 4-x Ce x Ti 4 O 15 powders are calcination at 500°C for 2 h.…”

An approach for correlating the structural and electrical properties of Zr4+-modified SrBi4Ti4O15/SBT ceramic

“…Among the layered family members, strontium bismuth titanate SrBi 4 Ti 4 O 15 (SBT) is the most versatile; it presents a mobile unit in an orthorhombic structure, described by the C 2v 12 (A2 1 am) space group, exhibits unique properties, such as high Curie temperature ($530 C), high dielectric constant ($200 at room temperature), high dielectric breakdown, low dielectric loss (0.017), high anisotropy and many other properties, suitable for use in acoustic and stress sensor devices working at high temperature. 4,5 However, compared with traditional piezoelectric ceramics, such as lead zirconate titanate (PZT) and BaTiO 3 , SBT has a low piezoelectric coefficient (15 pC/N) and electromechanical coupling factors with a high coercive eld because the rotation of the spontaneous polarization is restricted to the a-b plane. High electronic conductivity (10 5 S cm À1 ) due to the volatilization of bismuth at high temperature should be attributed to defects mainly related to oxygen vacancies.…”