Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys

Abstract

The effect of alloying small amounts of ZnO with ZnSe on the electronic band structure has been studied. Optical transitions in MBE-grown ZnO x Se 1-x epitaxial films (0 < x < 1.35%) were investigated using photoreflectance and photoluminescence spectroscopies. The fundamental band-gap energy of the alloys was found to decrease at a rate of about 0.1 eV per atomic percent of oxygen. The pressure dependence of the band gap was also found to be strongly affected by the O incorporation. Both the effects can be quantitatively explained by an anticrossing interaction between the extended states of the conduction band of ZnSe and the highly localized oxygen states located at approximately 0.22 eV above the conduction band edge.

New Developments in Dilute Nitride Semiconductor Research

“…For example, a dramatic O-induced reduction of the bandgap has been reported in Cd 1-y Mn y O x Te 1-x and ZnO x Se 1-x . 85,86 Thus, partial replacement of group-VI anions with more electronegative O atoms in II-VI compounds does have the effect similar to incorporating nitrogen into III-V materials. It has been shown that the electronic structure of these alloys can be well described by that BAC model.…”

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

“…well as group II-VI dilute oxides [30,31,32,33,34] or any HMA in which metallic atoms are partially substituted with more electronegative atoms [43]. It provides a description of the conduction band structure for the cases with localized levels in the band as well as with localized levels located in the band gap close to the CBE of the host material.…”

“…Similarly, a large variety of group II-VI based HMAs have been studied including dilute oxides e.g. ZnOxSe1-x [30] and ZnOxTe1-x [31,32,33,34] where a small portion of metallic Se or Te is replaced with electronegative O, or dilute selenide ZnSexO1-x [35] or tellurides ZnTexO1-x [36] in which a fraction of O anions is replaced with Se or Te, respectively.…”

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

“…An important feature of the modified BAC model is thus that it predicts smaller band gap reductions and could provide a better explanation for the composition dependence previously observed in other HMAs including GaNAs, ZnOTe, and ZnOSe. 1,[31][32][33] In summary, we have studied the optical properties of GaNSb alloys grown by a multilayer method. The composition dependence of the optical absorption edge of the alloy is explained by a modified BAC model that allows for a more accurate determination of the band gap energy and the locations of the band edges relative to the water redox potentials.…”