Effect of Oxygen Partial Pressure on Structure and Dielectric Property of BaTi<SUB>2</SUB>O<SUB>5</SUB> Films Prepared by Laser Ablation

Abstract

BaTi 2 O 5 ferroelectric films were prepared on MgO (100) substrates by laser ablation at various oxygen partial pressures (P O2 ). The effect of P O2 on the orientation, composition, surface morphology and dielectric property of the films was investigated. The molar ratio of Ti to Ba was independent of P O2 , almost in agreement with the stoichiometric composition of BaTi 2 O 5 . The BaTi 2 O 5 films showed the orientation of (710) and (020) depending on P O2 . At P O2 ¼ 12:5 Pa, (020) oriented BaTi 2 O 5 film with an elongated granular and perpendicularly crossing texture was epitaxially grown on MgO (100) substrates. The BaTi 2 O 5 film prepared at P O2 ¼ 12:5 Pa exhibited a sharp permittivity maximum (" 0 % 2000) at 750 K.

Preparation of ferroelectric BaTi2O5 thin films on Pt(111)/Ti/SiO2/Si substrates by pulsed laser deposition

“…Up to now, only Wang et al [11][12][13][14] had prepared BaTi 2 O 5 thin films on MgO(1 0 0) substrates by pulsed laser deposition, but the ferroelectricity of the films was not reported. In order to realize the application of BaTi 2 O 5 thin films in ferroelectric devices, Pt(1 1 1)/Ti/SiO 2 /Si substrates should be further employed * Corresponding author.…”

Laser Energy Dependent Structure of Pulsed Laser Deposited Barium Dititanate Films

“…Due to the potential applications in ferroelectric actuators and devices such as high density dynamic random access memories and nonvolatile ferroelectric random access memories, BaTi2O5 films have been prepared by pulsed laser deposition (PLD) technique. The effects of PLD parameters, for example substrate temperature and oxygen partial pressure, were investigated in order to obtain highly-oriented BaTi2O5 films [5,6]. Laser energy, another important deposition parameter for PLD which has a dominant influence on film structure, should be further investigated.…”