2017
DOI: 10.1063/1.4989775
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Effect of oxygen plasma on nanomechanical silicon nitride resonators

Abstract: Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter we study the in uence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma of only a few minutes oxidizes the silicon nitride surface, creating several nanometer thic… Show more

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Cited by 25 publications
(24 citation statements)
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“…1 Recently however, progress has been made towards diamond on silicon nitride devices, employing the ceramic, for example, as an interlayer to facilitate polycrystalline diamond growth on GaN for GaNbased high electron mobility transistors. 6,7 The potential for integrated diamond -silicon nitride MEMS, [8][9][10][11] cryogenic radiation sensor arrays, 12 and graphene on silicon nitride transistors, 13 are also imagined. The fabrication of such device architectures would benefit from a comprehensive study of the silicon nitride surface, which could then be exploited, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…1 Recently however, progress has been made towards diamond on silicon nitride devices, employing the ceramic, for example, as an interlayer to facilitate polycrystalline diamond growth on GaN for GaNbased high electron mobility transistors. 6,7 The potential for integrated diamond -silicon nitride MEMS, [8][9][10][11] cryogenic radiation sensor arrays, 12 and graphene on silicon nitride transistors, 13 are also imagined. The fabrication of such device architectures would benefit from a comprehensive study of the silicon nitride surface, which could then be exploited, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…To analyze the effects of tensile stress and optimize the responsivity systematically, we used silicon nitride drums with an intrinsic tensile stress of 1 GPa, 250 MPa, and 30 MPa. A drum with 30 MPa was further treated with 50-W oxygen plasma to reduce the tensile stress ( 38 ). The oxygen plasma forms a thin silicon oxynitride layer with a compressive stress on the drum surface.…”
Section: Effect Of Tensile Stress On Responsivitymentioning
confidence: 99%
“…The second mask is transferred into the Si substrate using dry etching process. A quick cleaning using buffered HF is performed to remove residual contamination as well as any oxidized Si 3 N 4 layer on the top film, which may arise from oxygen plasma exposure of the film during cleaning [28]. After the release process, the samples are dried using critical point drying (CPD) to avoid collapse of the structures to the underlying silicon substrate.…”
mentioning
confidence: 99%