Effect of ozone concentration on atomic layer deposited tin oxide

Abstract

Tin dioxide (SnO2) thin films were deposited by atomic layer deposition (ALD) using tetrakis(dimethylamino)tin {[(CH3)2N]4Sn} and various concentrations of ozone (O3) at 200 °C. In order to characterize SnO2 thin films, the growth rate, thin film crystallinity, surface roughness, chemical bonding state, and electrical and optical properties were investigated. The growth rate of SnO2 increased slightly when the O3 concentration was increased. However, the growth rate was almost saturated above 300 g/m3 concentration of O3. Also, the x-ray diffraction patterns of SnO2 thin films become sharper when the O3 concentration increased. Specifically, the (101) and (211) peaks of SnO2 improved. In addition, the defects of the SnO2 thin films such as oxygen vacancy and hydroxyl group are related to the O3 concentration that was observed via x-ray photoelectron spectroscopy. As the O3 concentration is higher than 300 g/m3, the electrical Hall resistivity and mobility saturated 3.6 × 10−3 Ω cm and 9.58 cm2/V s, respectively. However, the carrier concentration slightly decreased to 3.22 × 1020 cm−3. It is assumed that the oxygen vacancies were filled with a high O3 concentration at ALD reaction. The optical bandgaps were larger than 3.5 eV, and the transmittance of all SnO2 thin films exceeded 90%. The O3 concentration below 200 g/m3 in the ALD process of SnO2 thin films is considered to be one of the factors that can affect the crystallinity, chemical bonding, and electrical properties.

Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

“…The reagents used within the ALD deposition also introduce their own hazards – TDMAH (used as a hafnium precursor) is flammable, pyrophoric and corrosive, 56 while ozone (used as a co-reagent) has to be kept at low concentrations (ideally controlled with an ozone generator and sensor), lest explosive decomposition reactions occur. 57…”

Tuning properties of SnO2/Au/SnO2 multilayer with variable Au thicknesses as transparent conductive oxides

“…[10][11][12][13][14] Additionally, SnO 2 has the advantage of inexpensive raw materials and processing and is capable of being deposited at low temperatures. 15,16) This advantage is suitable for using the SnO 2 thin film as a transparent conductive film. Additional advantages of SnO 2 include a property to prevent penetration of water vapor through strong chemical interactions and stability due to high branch polarity.…”

Role of an Al2O3 Passivation Layer during Annealing of 2D-SnS2 Thin Films Grown by Atomic Layer Deposition

“…Al 2 O 3 , ZrO 2 , and SnO 2 have been widely used due to their resistant properties and chemical stability. [30][31][32][33][34][35] However, a passivation layer for 2D SnS 2 thin film has not been thoroughly investigated; only a few groups have attempted work on a passivation layer. Lee et al investigated the role of a ZrO 2 passivation layer on 2D SnS 2 thin films and found that use of ZrO 2 improved the interface between 2D SnS 2 thin films and electrodes by forming a metal-insulator-semiconductor (MIS) contact structure and blocked penetration of moisture from the air.…”