Tuning properties of SnO₂/Au/SnO₂ multilayer with variable Au thicknesses as transparent conductive oxides

Abstract

Multilayer tin oxide/gold/tin oxide (SnO2/Au/SnO2) was deposited by atomic layer deposition and an e-beam evaporator. The structural, electrical, and optical properties of the SnO2/Au/SnO2 multilayer were investigated. Au formed islands at a thickness less than 3 nm. As the Au interlayer thickness increased, the Au islands merged, resulting in a continuous film 12 nm thick. As the Au interlayer thickness increased from 0 to 12 nm, the carrier concentration and Hall mobility increased to 2.41 × 1022 cm−3 and 11.96 cm2 V−1 s−1, respectively. As a result, the resistivity decreased at 10−5 Ω cm with an increasing Au interlayer thickness compared to a SnO2 single layer. In addition, optical transmittance at 550 nm increased by more than 80% at 6 and 9 nm than at Au thicknesses of 3 and 12 nm. SnO2/Au/SnO2 multilayers are promising candidates as an indium-free transparent conducting oxide for use in high performance optoelectronic devices.

Leakage Current Characteristics of Atomic Layer Deposited Al-Doped TiO2Thin Film for Dielectric in DRAM Capacitor

“…11,12 In the ALD process, thin film can be deposited at a lower temperature compared to the CVD (chemical vapor deposition) process, and is excellent in many aspects such as uniformity of thin film and step coverage. [13][14][15] Therefore ALD is being studied as a next-generation deposition process. TiO 2 thin films have two crystalline structures, anatase and rutile crystal structures, which have a relatively high k value greater than 20.…”

The effect of an annealing process on atomic layer deposited TiO2 thin films

“…TiO 2 thin films deposited by the chemical vapor deposition process have a high growth rate, but they require a high deposition temperature and have poor step coverage and a higher concentration of impurities. However, TiO 2 thin films deposited by the ALD process have excellent step coverage and a lower impurity concentration [6][7][8][9]. However, in the case of TiO 2 thin films, leakage current is a main problem compared to SiO 2 thin films, which are used as dielectric materials [10,11].…”

Facile fabrication and low-temperature bonding of Cu@Sn–Bi core–shell particles for conductive pastes

“…In both kinds of conductive inks, the properties of conductive llers are of great importance. Conductive llers mainly include carbon-based materials (such as graphenes, graphene oxides and carbon nanotubes), 12,13 transparent conductive oxides (such as In 2 O 3 , ZnO and SnO 2 ) 14,15 and metallic nano-micro llers (such as Cu or Ag nanoparticles). 16,17 Metal llers have distinct advantages in mechanical property, ductility and electrical conductivity.…”