Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2

Cheylan, S.; Elliman, R. G.

doi:10.1063/1.1357450

Cited by 70 publications

(53 citation statements)

References 17 publications

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“…10,[13][14][15] However, in all the previous works the implantation has been performed at room temperature ͑RT͒ and only one PL band centered at 780 nm was observed, in agreement with results obtained using the other techniques mentioned ͑CVD, MBE, etc͒.…”

Section: Introductionsupporting

confidence: 73%

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Optical and structural properties of Si nanocrystals produced by Si hot implantation

Sias

Behar

Boudinov

et al. 2007

Journal of Applied Physics

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It was already demonstrated that Si hot implantation followed by high-temperature annealing induces the formation of Si nanocrystals ͑Si NCs͒ which when excited in a linear excitation regime present two photoluminescence ͑PL͒ bands ͑at 780 and 1000 nm͒. We have undertaken the present work in order to investigate three features: First, to determine the origin of each band. With this aim we have changed the implantation fluence and the high-temperature annealing time. Second, to investigate the influence of the postannealing atmosphere on the PL recovering process after bombarding the Si NCs. Third, we have annealed the as-produced Si NCs in a forming gas ͑FG͒ atmosphere in order to observe the PL behavior of each band. The results have shown that the 780 nm PL band has its origin in radiative interfacial states, while the 1000 nm one is due to quantum size effects. From the experiments we have concluded that the PL recovery after the Si NCs irradiation strongly depends on the type of postannealing atmosphere. Finally, it was found that the FG treatment strongly affects the line shape of the PL spectrum.

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Section: Introductionsupporting

confidence: 73%

“…Larger Si NCs having longer radiative lifetimes 25 are also more likely to contain nonradiative recombination centers. 14 Concerning the annealing time dependence of the 1000 nm PL band, it shows a significant PL peak redshift with increasing annealing time ͑up to 6 h͒, followed by saturation-see Fig. 6͑b͒.…”

Section: Discussionmentioning

confidence: 99%

Optical and structural properties of Si nanocrystals produced by Si hot implantation

Sias

Behar

Boudinov

et al. 2007

Journal of Applied Physics

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“…This is evidence of H passivation of the remaining Si-dbs in the samples. As will be shown in section 3.3, increases of the PL intensity by comparable factors are observed, as is expected from the H passivation given that dbs act as efficient non-radiative recombination centers in both amorphous Si [27] and Si nanostructures [6,9,17,24,[29][30][31][32][33][34][35].…”

Section: Paramagnetic Defectsmentioning

confidence: 65%

From amorphous to crystalline silicon nanoclusters: structural effects on exciton properties

Borrero-González

Nunes

Guimarães

et al. 2011

J. Phys.: Condens. Matter

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Synchrotron x-ray absorption spectroscopy (XAS) and electron spin resonance (ESR) experiments were performed to determine, in combination with Raman spectroscopy and x-ray diffraction (XRD) data from previous reports, the structure and paramagnetic defect status of Si-nanoclusters (ncls) at various intermediate formation stages in Si-rich Si oxide films having different Si concentrations (y = 0.36-0.42 in Si y O 1−y ), fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition and isochronally (2 h) annealed at various temperatures (T a = 900-1100 • C) under either Ar or (Ar + 5%H 2 ) atmospheres. The corresponding emission properties were studied by stationary and time dependent photoluminescence (PL) spectroscopy in correlation with the structural and defect properties. To explain the experimental data, we propose crystallization by nucleation within already existing amorphous Si-ncls as the mechanism for the formation of the Si nanocrystals in the oxide matrix. The cluster-size dependent partial crystallization of Si-ncls at intermediate T a can be qualitatively understood in terms of a 'crystalline core-amorphous shell' Si-ncl model. The amorphous shell, which is invisible in most diffraction and electron microscopy experiments, is found to have an important impact on light emission. As the crystalline core grows at the expense of a thinning amorphous shell with increasing T a , the PL undergoes a transition from a regime dominated by disorder-induced effects to a situation where quantum confinement of excitons prevails.

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“…For instance, it is well known that passivation of nonradiative interface states enhances the photoluminescence properties of the Si NC without changing the crystallite size. 5,6 On the other hand, an increase in the NC dimension makes their light absorption characteristics approach to bulk Si, which means, smaller absorption cross sections. Although large grains have higher electronic density of states, their oscillator strength is smaller 9,10 and consequently, the radiative recombination rate is lower.…”

Section: Introductionmentioning

confidence: 99%

“…The discussions are basically centered on whether light emission occurs via quantum confinement or via interface states located at the nanocrystals surface. [4][5][6][7][8] It is known that several parameters can contribute to the Si NC PL properties, such as the number and size of crystallites, their surrounding and/or competitive nonradiative processes. For instance, it is well known that passivation of nonradiative interface states enhances the photoluminescence properties of the Si NC without changing the crystallite size.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence behavior of Si nanocrystals as a function of the implantation temperature and excitation power density

Sias

Amaral

Behar

et al. 2005

Journal of Applied Physics

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In this work we present a study of photoluminescence ͑PL͒ on Si nanocrystals ͑NC͒ produced by ion implantation on SiO 2 targets at temperatures ranging between room temperature and 800°C and subsequently annealed in N 2 atmosphere. The PL measurements were performed at low excitation power density ͑20 mW/ cm 2 ͒ in order to avoid nonlinear effects. Broad PL spectra were obtained, presenting a line-shape structure that can be reproduced by two superimposed peaks at around 780 and 950 nm. We have observed that both PL intensity and line-shape change by varying the annealing as well as the implantation temperatures. Implantations performed at 400°C or higher produce a remarkable effect in the PL line shape, evidenced by a strong redshift, and a striking intensity increase of the peak located at the long-wavelength side of the PL spectrum. In addition we have studied the PL dependence on the excitation power density ͑from 0.002 to 15 W / cm 2 ͒. The samples with broad NC size distribution containing large grains, as revealed by transmission electron microscopy observations presented a PL spectrum whose line shape was strongly dependent on the excitation power density. While high excitation power densities ͑saturation regime͒ induce only the short-wavelength part of the PL spectrum, low excitation power densities bring out the appearance of the hidden long-wavelength part of the emission. The present results are explained by current models.

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Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2

Cited by 70 publications

References 17 publications

Optical and structural properties of Si nanocrystals produced by Si hot implantation

Optical and structural properties of Si nanocrystals produced by Si hot implantation

From amorphous to crystalline silicon nanoclusters: structural effects on exciton properties

Photoluminescence behavior of Si nanocrystals as a function of the implantation temperature and excitation power density

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