Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Iwabuchi, Takashi; Liu, Yuhuai; Kimura, Takeshi; Zhang, Yuantao; Prasertsuk, Kiattiwut; Watanabe, Hiroshi; Usami, Noritaka; Katayama, Ryuji; Matsuoka, Takashi

doi:10.7567/jjap.51.04dh02

Cited by 9 publications

(9 citation statements)

References 14 publications

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“…27) [Topic II] The other approach is InGaN growth using pressurized-reactor MOVPE (PR-MOVPE). [28][29][30] [Topic I] There are large piezoelectric fields in III-nitrides that have a wurtzite (WZ) structure. In addition, the InGaN active layers are under biaxial compressive stress due to the large lattice constant of InGaN compared with that of a GaN substrate.…”

Section: Issues With Ingan Movpementioning

confidence: 99%

“…To reduce the dislocation density in films, the diffusion length of the component atoms or the growth temperature should be increased. PR-MOVPE [28][29][30] is effective for increasing the optimum growth temperature of In-rich InGaN, since the decomposition of the material is suppressed even at a relatively high temperature. The incorporation of the metastable zinc-blende (ZB) structure in stable WZ-InN, however, is a major issue to be resolved in the development of InN PR-MOVPE.…”

Section: Issues With Ingan Movpementioning

confidence: 99%

“…The incorporation of the metastable zinc-blende (ZB) structure in stable WZ-InN, however, is a major issue to be resolved in the development of InN PR-MOVPE. [28][29][30] In this review article, we also discuss the mechanism of ZB-InN incorporation into WZ-InN.…”

Section: Issues With Ingan Movpementioning

confidence: 99%

“…InGaN PR-MOVPE is carried out to raise the growth temperature and improve the crystalline quality of the epilayer. [28][29][30] Figure 9 shows the phase diagram of InN grown along ½000 " 1-" c by PR-MOVPE. 29) It is found that the metastable ZB structure is incorporated into the stable WZ-InN structure under a high In partial pressure and a low temperature.…”

Section: Structural Stability Of Innmentioning

confidence: 99%

See 3 more Smart Citations

Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Kangawa

Koukitu

et al. 2014

Jpn. J. Appl. Phys.

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The surface stability, growth process, and structural stability of InGaN and InN are reviewed from a theoretical viewpoint. In 2001, a new theoretical approach based on an ab initio calculation was developed. This theoretical approach enables the investigation of the influence of growth conditions such as partial pressure and temperature on the surface stability. The theoretical approach is applied to the research on the In incorporation efficiency in InGaN grown on nonpolar and semipolar surfaces. The calculation results suggest that the N–H layer formed on such surfaces has a crucial role in In incorporation. Moreover, the structural stability of InN grown by pressurized-reactor MOVPE is reviewed. It was found by the theoretical approach that facet formation causes the spontaneous formation of islands with the zinc-blende structure.

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Section: Issues With Ingan Movpementioning

confidence: 99%

Section: Issues With Ingan Movpementioning

confidence: 99%

Section: Issues With Ingan Movpementioning

confidence: 99%

Section: Structural Stability Of Innmentioning

confidence: 99%

See 2 more Smart Citations

Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Kangawa

Koukitu

et al. 2014

Jpn. J. Appl. Phys.

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“…One of the causes of this difficulty is considered to be the inclusion of the metastable zincblende (ZB) phase into the stable wurtzite (WZ) phase matrix and simultaneous roughening of the surface, analogous to the case of Àc-plane InN growth. 13,14 In this study, the growth condition dependences of the metastable ZB-phase inclusion in Àc-plane InGaN/GaN multiple quantum wells (MQWs) are elucidated by using the electron backscatter diffraction (EBSD) measurements. 15,16 Several methods to suppress the ZB-phase inclusion are proposed.…”

mentioning

confidence: 99%

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Shojiki

Choi

Iwabuchi

et al. 2015

Applied Physics Letters

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The metastable zincblende (ZB) phase in N-polar (0001¯) (−c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the −c-plane and Ga-polar (0001) (+c-plane), the −c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the −c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated.

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Thermodynamic Approach to InN Epitaxy

Kangawa

2018

Epitaxial Growth of III-Nitride Compounds

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Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Cited by 9 publications

References 14 publications

Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Thermodynamic Approach to InN Epitaxy

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