2014
DOI: 10.7567/jjap.53.100202
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Progress in theoretical approach to InGaN and InN epitaxy: In incorporation efficiency and structural stability

Abstract: The surface stability, growth process, and structural stability of InGaN and InN are reviewed from a theoretical viewpoint. In 2001, a new theoretical approach based on an ab initio calculation was developed. This theoretical approach enables the investigation of the influence of growth conditions such as partial pressure and temperature on the surface stability. The theoretical approach is applied to the research on the In incorporation efficiency in InGaN grown on nonpolar and semipolar surfaces. The calcula… Show more

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Cited by 10 publications
(12 citation statements)
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“…47 There is a strong influence of strain on the band structure of In x Ga 1-x N based materials. The strained In x Ga 1-x N has lower Indium incorporation efficiency than the stress-free In x Ga 1-x N. 48 With an increase in Indium concentration; the quality of the crystalline In x Ga 1-x N material deteriorates. The InN decomposes at a low growth temperature of approx.…”
Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning
confidence: 99%
“…47 There is a strong influence of strain on the band structure of In x Ga 1-x N based materials. The strained In x Ga 1-x N has lower Indium incorporation efficiency than the stress-free In x Ga 1-x N. 48 With an increase in Indium concentration; the quality of the crystalline In x Ga 1-x N material deteriorates. The InN decomposes at a low growth temperature of approx.…”
Section: Metal Organic Chemical Vapor Deposition (Mocvd)mentioning
confidence: 99%
“…This is mainly because the lattice mismatch between InGaN and SAM increased along with the increasing indium composition due to the coverage increment of the ‐c‐plane, which has a high‐indium‐incorporation efficiency. [ 30 ] With an even longer growth time, more than 10 min, indium composition decreased, possibly caused by the emerge of other planes resulting in a deterioration of surface morphology or low uniformity of composition of the 1st InGaN since it was grown under a condition of large supersaturation. High‐quality thick InGaN was fabricated in a two‐step growth using THVPE with an FWHM value less than 1000 arcsec.…”
Section: Resultsmentioning
confidence: 99%
“…[36,37] In addition, difference between minimum energy for ZB and WZ phases is calculated to be very small in the range À18 to À9 meV/atom for III-N, 3 to 12 meV/atom for III-V and À1.1 to 6 meV/atom for II-VI group. [10,36,38] Therefore, existence of both phases for II-VI and III-N can be considered to be a finite possibility and has been already observed for InN [39][40][41] and CdS [42][43][44][45] in bulk form. Whereas, most III-V's except some nitrides show cubic structure in bulk form.…”
Section: Resultsmentioning
confidence: 99%