2019
DOI: 10.1016/j.orgel.2019.01.055
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Effect of photogenerated carrier distribution on performance enhancement of photomultiplication organic photodetectors

Abstract: The trap-assisted photomultiplication (PM) organic photodetectors (OPDs) are very attractive for achieving high sensitivity photodetection, with external quantum efficiency (EQE) in excess of 100%. A classic structure of PM-type OPDs has a poly-3-hexylthiophene (P3HT): Phenyl-C70-butyric acid methyl ester (PC70BM) blend active layer, made with the weight ratio of P3HT to PC70BM of 100:1. The presence of a low PC70BM content in the P3HT:PC70BM blend layer forms isolated PC70BM short wavelength range while the O… Show more

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Cited by 18 publications
(8 citation statements)
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“…Since the applied bias also lowers the cathode Schottky junction, the injected carriers under illumination can ow smoothly from the blend towards the cathode. 35,36 It is seen from Fig. 1b that the photocurrent response of Al 2 O 3 -PM-OPD under a forward bias of 19 V was much higher than its response under a reverse bias of -19 V. Moreover, compared with the control device that can only work under a reverse bias, Al 2 O 3 -PM-OPD shows much superior responses under a forward bias.…”
Section: Resultsmentioning
confidence: 94%
“…Since the applied bias also lowers the cathode Schottky junction, the injected carriers under illumination can ow smoothly from the blend towards the cathode. 35,36 It is seen from Fig. 1b that the photocurrent response of Al 2 O 3 -PM-OPD under a forward bias of 19 V was much higher than its response under a reverse bias of -19 V. Moreover, compared with the control device that can only work under a reverse bias, Al 2 O 3 -PM-OPD shows much superior responses under a forward bias.…”
Section: Resultsmentioning
confidence: 94%
“…The use of the Al 2 O 3 interfacial layer also helps to increase the work function of the PEDOT:PSS HTL, so that the J D can be suppressed effectively in the PM‐OPDs operated under a forward bias which thus enables the photomultiplication behavior be realized through charge injection from the anode. [ 29–32 ] Therefore, with the help of interfacial modification, the CIN‐induced narrowband response at 650 nm with an FWHM of 40 nm is demonstrated for the PM‐OPDs operated under a forward bias of 60 V, leading to a peak R of 1334 A W −1 and a peak D * 9.73 × 10 13 Jones, which are 1.82 and 18.28 times higher than that obtained for the control device. The responsivity and detectivity of the proposed device outperform the performances of all other CIN‐induced narrowband PM‐OPDs.…”
Section: Introductionmentioning
confidence: 91%
“…Photogenerated electrons are trapped by a localized acceptor near the Schottky interface, inducing band bending under illumination. Photomultiplication is achieved by the photoinduced injection of circulating holes from the external circuit to the photoactive layer under reverse bias [22–23] . In addition, barrier modification assisted by the tunneling effect or contact is also considered a key mechanism for increasing the gain [24–28] .…”
Section: Figurementioning
confidence: 99%
“…Photomultiplication is achieved by the photoinduced injection of circulating holes from the external circuit to the photoactive layer under reverse bias. [22][23] In addition, barrier modification assisted by the tunneling effect or contact is also considered a key mechanism for increasing the gain. [24][25][26][27][28] While the application of these strategies has greatly boosted the EQE of organic photodetectors (Table S1), [29][30][31][32][33][34][35][36][37][38][39] the gains are generally obtained by requiring a high bias accompanied with a high dark current, and the multiplied photocurrent often displays a slow transient response.…”
mentioning
confidence: 99%