Effect of photogenerated carriers on the spectral diffusion of a quantum dot coupled to a photonic crystal cavity

Majumdar, Arka; Kim, Erik D.; Vučković, Jelena

doi:10.1103/physrevb.84.195304

Cited by 22 publications

(25 citation statements)

References 31 publications

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“…We speculate that the effect of this auxiliary laser is to change the timescale of the flickering by neutralization of surrounding charges. Spectral diffusion is also commonly observed for QDs in nanostructures, where it is associated with the proximity of etched surfaces 25 .…”

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confidence: 99%

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Coherent versus incoherent light scattering from a quantum dot

et al. 2012

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We analyze the light scattered by a single InAs quantum dot interacting with a resonant continuous-wave laser. High resolution spectra reveal clear distinctions between coherent and incoherent scattering, with the laser intensity spanning over four orders of magnitude. We find that the fraction of coherently scattered photons can approach unity under sufficiently weak or detuned excitation, ruling out pure dephasing as a relevant decoherence mechanism. We show how spectral diffusion shapes spectra, correlation functions, and phase-coherence, concealing the ideal radiativelybroadened two-level system described by Mollow.

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confidence: 99%

“…In theory we expect spectral diffusion to reduce the fringe contrast (visibility) by a factor of order κ/s ≈0. 25.…”

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confidence: 99%

Coherent versus incoherent light scattering from a quantum dot

et al. 2012

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“…4,5 However, these approaches suffer from drawbacks including the limited coherence times of spins in InAs/GaAs quantum dots, 6 the necessity for operation at cryogenic temperatures, 4 incompatibility with Si CMOS platforms (as is needed for devices in optical interconnects), and large inhomogeneous broadening. 7 On the other hand, for NV − centers in diamond, drawbacks include a lack of a second order optical nonlinearity needed for efficient frequency conversion, 8 degradation of NV − center properties resulting from proximity of etched surfaces, and nonstandard fabrication methods needed to carve optical structures in bulk diamond. 9,10 Hybrid solid- state schemes consisting of quantum emitters in individual nanocrystals coupled to semiconductor optical cavities in other materials have also been demonstrated; 11 however, they typically require AFM 'pick-and-place' assembly techniques 12 or complex film transfers.…”

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confidence: 99%

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

et al. 2015

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We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV − ) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV − color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV − on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV − centers. Scanning confocal photoluminescence measurements reveal optically active SiV − lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV − lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV − centers in bulk diamond, consistent with a double lambda.These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

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“…One method is to reduce the emitter lifetime (T 1 ) so that it masks T * 2 , typically achieved with Purcell enhancement by embedding the QD in a highquality factor (Q) cavity [3,[47][48][49]. Unfortunately, increased charge noise often accompanies the Purcell enhancement in processed photonic devices [43][44][45]. Additionally, recapture of carriers excited by a non-or quasiresonant laser can ruin the purity of the single photon emission from QDs in cavities, especially when driven near saturation [3,10,31,50,51].…”

Section: Introductionmentioning

confidence: 99%

“…Charge noise is present under both incoherent [3,37,38] and coherent [32,33,[39][40][41][42] excitation. The origins of the charge traps that host the fluctuations can vary depending on the sample; potential sources include nearby surface states in processed photonic structures [43][44][45], traps created at heterostructure interfaces [41], impurities from intentional dopants [39], and residual background dopant impurities [42,46]. Charge noise is often identified as an origin of increased ensemble dephasing and decreased two-photon interference visibility [3,5,7,31,47].…”

Section: Introductionmentioning

confidence: 99%

Generating indistinguishable photons from a quantum dot in a noisy environment

Santana

Malein

et al. 2017

Phys. Rev. B

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Single photons from semiconductor quantum dots are promising resources for linear optical quantum computing, or, when coupled to spin states, quantum repeaters. To realize such schemes, the photons must exhibit a high degree of indistinguishability. However, the solid-state environment presents inherent obstacles for this requirement as intrinsic semiconductor fluctuations can destroy the photon indistinguishability. Here, we demonstrate that resonant excitation of a quantum dot with a narrow-band laser generates near transform limited power spectra and indistinguishable photons from a single quantum dot in an environment with many charge-fluctuating traps. The specificity of the resonant excitation suppresses the excited state population in the quantum dot when it is detuned due to spectral fluctuations. The dynamics of this process lead to flickering of the emission over long time scales (>5 μs) and reduces the time-averaged count rates. Nevertheless, in spite of significant spectral fluctuations, high visibility two-photon interference can be achieved. This approach is useful for quantum dots with nearby surface states in processed photonic structures and quantum emitters in emerging platforms, such as two-dimensional semiconductors.

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Effect of photogenerated carriers on the spectral diffusion of a quantum dot coupled to a photonic crystal cavity

Cited by 22 publications

References 31 publications

Coherent versus incoherent light scattering from a quantum dot

Coherent versus incoherent light scattering from a quantum dot

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

Generating indistinguishable photons from a quantum dot in a noisy environment

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