Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study

Kumar, S. Santosh; Pant, B. D.

doi:10.1007/s00542-015-2451-5

Cited by 28 publications

(12 citation statements)

References 27 publications

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“…In order to achieve high sensitivity and small size for the piezoresistive pressure sensors, there have been lots of studies focused on the design, simulation and the manufacturing technology have been performed [6,7]. For example, Kalvesten, E. et al [8] fabricated a thin-film pressure sensor by releasing thermal oxygen sacrificial layer in a cavity with a gap of 3 µm.…”

Section: Of 10mentioning

confidence: 99%

A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Song

Zhang

et al. 2020

Sensors

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A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

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Section: Of 10mentioning

confidence: 99%

A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Song

Zhang

et al. 2020

Sensors

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“…P is the applied pres sure; H is the membrane thickness; μ is the Poisson ratio; and L is the side length of the square membrane, B is the width of the rectangular membrane, and R is the radius of the circular membrane. By assuming that membrane thickness H and applied load P are totally same for the three models, additionally, L is 1.2 times B and 2 times R respectively, the following relationships can be obtained: 16 1.64 sm rm cm (4) which means an ∼15% and ∼60% improvement for the stress can be achieved by choosing the square membrane rather than other two types.…”

Section: Design Principlementioning

confidence: 99%

“…Sensitivity is proportional to the (membrane length)/(membrane thickness) ratio (L/H), so it can be increased by a larger ratio of that quantity. Unfortunately, the pressure nonlinearity increases with this ratio at a much faster rate, as the pressure non linearity of the pressure to stress conversion is proportional to (L/H) 4 [11]. Thus, the contradiction between sensitivity and linearity is always irreconcilable for traditional membrane structure.…”

Section: Introductionmentioning

confidence: 99%

Design optimization and fabrication of a novel structural piezoresistive pressure sensor for micro-pressure measurement

Cordovilla

Ocaña

2018

Solid-State Electronics

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This paper presents a novel structural piezoresistive pressure sensor with a four-beams-bossed-membrane (FBBM) structure that consisted of four short beams and a central mass to measure micro-pressure The proposed structure can alleviate the contradiction between sensitivity and linearity to realize the micro measurement with high accuracy In this study, the design, fabrication and test of the sensor are involved By utilizing the finite element analysis (FEA) to analyze the stress distribution of sensitive elements and subsequently deducing the relationships between structural dimensions and mechanical performance, the optimization process makes the sensor achieve a higher sensitivity and a lower pressure nonlinearity Based on the deduced equations, a series of optimized FBBM structure dimensions are ultimately determined The designed sensor is fabricated on a silicon wafer by using traditional MEMS bulk-micromachining and anodic bonding technology Experimental results show that the sensor achieves the sensitivity of 4 65 mV/V/kPa and pressure nonlinearity of 0 25% FSS in the operating range of 0-5 kPa at room temperature, indicating that this novel structure sensor can be applied in measuring the absolute micro pressure lower than 5 kPa

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“…Utilizing this effect, pressure sensors were fabricated and tested to determine sensitivity and linearity of different piezoresistive configurations at different temperatures. 3 In this context, sensor design made of parallel transverse resistors has better sensitivity and linearity than a single transverse resistor. In contrast, two longitudinal strain gauges were integrated into a cantilever-based microforce sensor.…”

Section: Introductionmentioning

confidence: 99%

Double-meander spring silicon piezoresistive sensors as microforce calibration standards

et al. 2016

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A transferable force calibration standard based on a silicon microelectromechanical sensor has been designed, fabricated, and characterized for micrometrology applications. Two essential elements of doublemeander springs and full piezoresistive etched p-silicon-on-insulator Wheatstone bridges (WBs) are integrated to the sensor for enhancing the device's sensitivity and eliminating the current leakage during an active sensing operation, respectively. The design process is supported by three-dimensional finite element modeling to select the optimal proposed sensors as well as simulating their mechanical and electrical properties in the desired force range (≤1000 μN). To fabricate the microforce sensors, a bulk micromachining technology is used by frequently involving an inductively coupled plasma deep reactive ion etching at cryogenic temperature. Several optical and electrical characterization techniques have been utilized to ensure the quality of the fabricated WBs, where their measured offset voltage can be down to 0.03 AE 0.071 mV∕V. In terms of its linearity, the fabricated device exhibits a small nonlinearity of <3%, which leads this sensor to be appropriate for precise microforce standard. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study

Cited by 28 publications

References 27 publications

A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Design optimization and fabrication of a novel structural piezoresistive pressure sensor for micro-pressure measurement

Double-meander spring silicon piezoresistive sensors as microforce calibration standards

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