Effect of plasma density and uniformity, electron temperature, process gas, and chamber on electron shading damage

Siu, S.; Patrick, Roger; Vahedi, Vahid; Alba, S.; Valentini, G.; Colombo, Paolo

doi:10.1109/ppid.1999.798800

Cited by 7 publications

(6 citation statements)

References 4 publications

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“…where k is the effective stressing factor that depends on device topography such as antenna aspect ratio. 12,15,50) The threshold voltage shift ÁV th by PCD is determined by the densities of the created trap sites and interface states. From a reliability test such as constant current stressing (CCS), threshold voltage shift is confirmed to be a function of the stress current density (I CCS ).…”

Section: Appendix Amentioning

confidence: 99%

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Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor

Eriguchi

Kamei

Takao

et al. 2011

Jpn. J. Appl. Phys.

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We discuss plasma charging damage (PCD) to high-k gate dielectrics and the resultant threshold voltage shift (ΔV th) in n-channel metal–oxide–semiconductor field-effect transistors (n-ch MOSFETs). The PCD induced by the antenna effect is focused on, and ΔV th and its variation are estimated for MOSFETs treated by various plasma processes. We propose a ΔV th variation model based on both the power-law dependence of ΔV th on the antenna ratio r (= exposed metal interconnect area/gate area) and the r distribution deduced from an interconnect-length distribution function (ILDF) in a large-scale integrated (LSI) circuit. Then, we simulate the variations in ΔV th [σ(ΔV th)] and the subthreshold leakage current I off [σ(I off)], in accordance with the employed r distribution. The model prediction quantitatively shows the effects of PCD on σ(ΔV th) and σ(I off): The antenna effect is found to increase σ(ΔV th) and σ(I off).

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Section: Appendix Amentioning

confidence: 99%

“…Note that a similar power-law dependence of ÁV th on r was reported for SiO 2 gate dielectric. 50) The larger jÁV th j observed for the ICP exposure [Fig. 2(b)] is considered to be due to the higher plasma density for the ICP exposure than for the CCP exposure, resulting in a larger I stress .…”

Section: Appendix Amentioning

confidence: 99%

Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor

Eriguchi

Kamei

Takao

et al. 2011

Jpn. J. Appl. Phys.

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“…32,33) From a plasma design point of view, plasma parameters such as plasma density and electron temperature, which determine electron and ion currents (J e and J i , in Fig. 1) and the directionality difference between electrons and ions, should be optimized 34) to reduce the damage. In this study, the antenna effects are focused.…”

Section: Plasma Charging Damagementioning

confidence: 99%

Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO₂ Gate Dielectrics

Eriguchi

Kamei

Hamada

et al. 2008

jjap

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Friction is ubiquitous in all aspects of everyday life and has consequently been under study for centuries. Classical theories of friction have been developed and used to successfully solve numerous tribological problems. However, modern applications that involve advanced materials operating under extreme environments can lead to situations where classical theories of friction are insufficient to describe the physical responses of sliding interfaces. Here, we review integrated experimental and computational studies of atomic-scale friction and wear at solid-solid interfaces across length and time scales. The influence of structural orientation in the case of carbon nanotube bundles, and molecular orientation in the case of polymer films of polytetrafluoroethylene and polyethylene, on friction and wear are discussed. In addition, while friction in solids is generally considered to be athermal, under certain conditions thermally activated friction is observed for polymers, carbon nanotubes and graphite. The conditions under which these transitions occur, and their proposed origins, are discussed. Lastly, a discussion of future directions is presented.

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“…Therefore, the operation of the ICP source with the dual frequencies of 2/13.56 Hz instead of the single frequency of 13.56 MHz is believed to decrease the possible damage to the sample during the plasma processing. [28][29][30][31] In large-scale substrate processing, one of the most important parameters is the plasma uniformity over the substrate surface. In this study, the plasma uniformity was also measured for the dual frequency operation using the Langmuir probe and the uniformity was compared with that for a single frequency of 13.56 MHz.…”

Section: Resultsmentioning

confidence: 99%

Plasma Characteristics of Inductively Coupled Plasma Using Dual-Frequency Antennas

Kim

Mishra

et al. 2013

Jpn. J. Appl. Phys.

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The chaotic behaviours of the Rydberg hydrogen atom near a metal surface are presented. A numerical comparison of Poincaré surfaces of section with recurrence spectra for a few selected scaled energies indicates the correspondence between classical motion and quantum properties of an excited electron. Both results demonstrate that the scaled energy dominates sensitively the dynamical properties of system. There exists a critical scaled energy εc, for ε < εc, the system is near-integrable, and as the decrease of ε the spectrum is gradually rendered regular and finally turns into a pure Coulomb field situation. On the contrary, if ε > εc, with the increase of ε, the system tends to be non-integrable, the ergodic motion in phase space presages that chaotic motion appears, and more and more electrons are adsorbed on the metal surface, thus the spectrum becomes gradually simple.

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Effect of plasma density and uniformity, electron temperature, process gas, and chamber on electron shading damage

Cited by 7 publications

References 4 publications

Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor

Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor

Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO₂ Gate Dielectrics

Plasma Characteristics of Inductively Coupled Plasma Using Dual-Frequency Antennas

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Effect of plasma density and uniformity, electron temperature, process gas, and chamber on electron shading damage

Cited by 7 publications

References 4 publications

Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor

Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal–Oxide–Semiconductor Field-Effect Transistor

Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO2 Gate Dielectrics

Plasma Characteristics of Inductively Coupled Plasma Using Dual-Frequency Antennas

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Product

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Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-k and SiO₂ Gate Dielectrics