Effect of Plasma Gases on Insulating Properties of Low-Temperature-Deposited SiOCH Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition

Abstract

We report on the determination of the astrometric, spin, and orbital parameters for PSR J1953+1846 A, a "black widow" binary millisecond pulsar in the globular cluster M71. By using the accurate position and orbital parameters obtained from radio timing, we identified the optical companion in Advanced Camera for Surveys/ Hubble Space Telescope images. It turns out to be a faint (m 24 F606W  , m 23 F814W  ) and variable star located at only ∼0″. 06 from the pulsar timing position. The light curve shows a maximum at the pulsar inferior conjunction and a minimum at the pulsar superior conjunction, thus confirming the association with the system. The shape of the optical modulation suggests that the companion star is heated, likely by the pulsar wind. The comparison with the X-ray light curve possibly suggests the presence of an intra-binary shock due to the interaction between the pulsar wind and the material released by the companion. This is the second identification (after COM-M5C) of an optical companion to a black widow pulsar in a globular cluster. Interestingly, the two companions show a similar light curve and share the same position in the color-magnitude diagram.

Low-Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide

“…The a-C:H/SiOCH/n-Si structures were fabricated by the deposition of a-C:H (~10 nm) on the SiOCH films (~400 nm). The SiOCH films were deposited using TEOS and Ar as described previously [8]. The applied RF power was 50-300 W in the SiOCH deposition, while the RF power were fixed at 300 W in the a-C:H deposition.…”

“…While most of the films are deposited with thermal process above 100°C, lower-temperature process is required in some OTFTs composed of heat-sensitive organic semiconductors [5,6]. Recently, we have succeeded in low-temperature (~30°C) deposition of carbon-doped silicon oxide (SiOCH) films using plasma-enhanced chemical vapor deposition (PECVD) with tetraethoxysilane (TEOS) and Ar [7,8]. The SiOCH films deposited at 27°C showed high resistivity of ~10 15 Ω cm due to low OH content in the films.…”

Electron Transport Properties in HSi(OC2H5)3Vapor

“…1,2) As a deposition material to build SiO 2 insulating layer, SiH 4 (monosilane) and Si(OC 2 H 5 ) 4 (tetraethoxysilane, TEOS) have been widely used. [3][4][5][6][7][8][9] In order to enhance the processing quality, achieving higher growth rates and conformal depositions, HSi(OC 2 H 5 ) 3 (triethoxysilane, TRIES) is paid attention to as an alternative for these materials. 10,11) In this article, we present the experimental results for the electron swarm parameters in TRIES, obtained by the arrival-time spectra (ATS) method using the double-shutter drift tube.…”