Abstract:Modeling and previous experiments have indicated that charging damage during metal–oxide semiconductor (MOS) polysilicon gate etching occurs just before endpoint when the last of the exposed polysilicon can collect excess plasma currents that cause damage by flowing through the gate oxide. During overetch, this damage mechanism is suppressed by the poor collection efficiency of the exposed polysilicon edges, so damage from this mechanism is expected to remain constant during this period. Although there is an a… Show more
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