Effect of polarization switching cycles on the dielectric response and Rayleigh constant in Pb0.4Sr0.6TiO3 thin films

Abstract

Pb 0.4 Sr 0.6 TiO 3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, dielectric response, and Rayleigh constant in thin films were systematically investigated. The results indicated that the polarization switching improves the extrinsic dielectric response and dielectric nonlinearity of these thin films because of the dielectric response of the oxygen vacancy to the applied electric field, while shows weak effect on the intrinsic dielectric and ferroelectric response. Moreover, the Rayleigh constant showed different evolutions in the films prepared at different substrate temperatures. V

Temperature-Dependent Domain Dynamics and Electrical Properties of Nd-doped Bi4Ti2.99Mn0.01O12 Thin Films in Fatigue Process

“…This phenomenon has also been reported in BiFeO 3 and Pb 0.4 Sr 0.6 TiO 3 thin films [7,23]. For BNTM05 and BNTM85, the thickness of the dead layer increases with T, leading to the reduction of ε r from 350 to 400 K. This change was also discussed in some other works [21,22,23]. Interestingly, the value of ε r of BTM thin film increases when the frequency is changed from 1 to 100 kHz after 10 9 pulse switching cycles.…”

“…After repetitive switching, the aggregation of oxygen vacancies on domain walls contributes to dielectric response and leads to an increase of dielectric constant of BTM. This phenomenon has also been reported in BiFeO 3 and Pb 0.4 Sr 0.6 TiO 3 thin films [7,23]. For BNTM05 and BNTM85, the thickness of the dead layer increases with T, leading to the reduction of ε r from 350 to 400 K. This change was also discussed in some other works [21,22,23].…”

Effect of orientation on polarization switching and fatigue of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films at both low and elevated temperatures

“…4d. As for BNTM-2, the effect of dead layer growth first plays a major role with T from 300 to 350 K during the fatigue tests, and then the enhanced domain unpinning effect leads to improved fatigue properties from 350 to 400 K. It was also discussed in some other works [22, 23].

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