2016
DOI: 10.1007/s10832-016-0059-5
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Multiferroic, magnetoelectric and magneto-impedance properties of NiFe2O4/(Pb, Sr) TiO3 bilayer films

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Cited by 7 publications
(1 citation statement)
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“…For example, Guo et al, have reported a novel ferroelectric/gyromagnetic ferrite layered composite thin film using as ferroelectric layer Pb 0.4 Sr 0.6 TiO 3 (PST) thin films [14]. Negi et al, have prepared NiFe 2 O 4 /(Pb, Sr)TiO 3 (NFO/PST) bilayer thin films by the chemical solution method and investigated their multiferroic, magnetoelectric and magneto-impedance properties [17]. In addition, the most common application is in nonvolatility memory devices, in which is used the ability of ferroelectric thin films to maintain their polarization state in the absence of an external field even after electric writing process.…”
Section: Introductionmentioning
confidence: 99%
“…For example, Guo et al, have reported a novel ferroelectric/gyromagnetic ferrite layered composite thin film using as ferroelectric layer Pb 0.4 Sr 0.6 TiO 3 (PST) thin films [14]. Negi et al, have prepared NiFe 2 O 4 /(Pb, Sr)TiO 3 (NFO/PST) bilayer thin films by the chemical solution method and investigated their multiferroic, magnetoelectric and magneto-impedance properties [17]. In addition, the most common application is in nonvolatility memory devices, in which is used the ability of ferroelectric thin films to maintain their polarization state in the absence of an external field even after electric writing process.…”
Section: Introductionmentioning
confidence: 99%