Effect of polishing pad with holes in electro-chemical mechanical planarization

Jeong, Sukhoon; Lee, Sangjik; Jeong, Haedo

doi:10.1016/j.mee.2008.07.006

Cited by 17 publications

(12 citation statements)

References 28 publications

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“…The polishing mechanisms of ECMP can largely be categorized into two types: abrasion-type ECMP and dissolution-type ECMP [1][2][3]. The experiments developed in this study belong to the dissolution-type ECMP.…”

Section: Introductionmentioning

confidence: 99%

Removal Rate Simulation of Copper Electrochemical Mechanical Planarization

Yanfei¹,

Wang²,

Cai³

et al. 2017

Intelligent Computing and Information Engineering (ICIE)

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An improved material removal rate method for simulating the Cu removal rate in electrochemical mechanical planarization (ECMP) based on the dissolution-type polishing mechanism was developed. The effects of the applied anodic potential, the Cu dissolution amount and the protective layer amount formed during ECMP process on the Cu removal rate are considered in this method. The protective layer amount and Cu dissolution amount were modeled using three simple equations, which were modeled on the basis of the dissolution-type polishing mechanism. This method is used to simulate the material removal rate in a rotary-type ECMP system. This understanding is beneficial for optimization of ECMP processes.

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Section: Introductionmentioning

confidence: 99%

Removal Rate Simulation of Copper Electrochemical Mechanical Planarization

Yanfei¹,

Wang²,

Cai³

et al. 2017

Intelligent Computing and Information Engineering (ICIE)

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“…Numerous attempts have been made to meet the new Cu planarization requirements due to the use of fragile ultra-low-к materials in the near future. Most of them are focused on slurries [ 7 - 11 ] and the derivative technologies of CMP such as electrochemical mechanical planarization [ 12 - 15 ] and electrochemical mechanical deposition [ 16 - 18 ]. As we know, the polishing pad is one of the most important consumables and plays a critical role in CMP.…”

Section: Introductionmentioning

confidence: 99%

A flexible nanobrush pad for the chemical mechanical planarization of Cu/ultra-low-к materials

Han

Liu

2012

Nanoscale Res Lett

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A new idea of polishing pad called flexible nanobrush pad (FNP) has been proposed for the low down pressure chemical mechanical planarization (CMP) process of Cu/ultra-low-к materials. The FNP was designed with a surface layer of flexible brush-like nanofibers which can ‘actively’ carry nanoscale abrasives in slurry independent of the down pressure. Better planarization performances including high material removal rate, good planarization, good polishing uniformity, and low defectivity are expected in the CMP process under the low down pressure with such kind of pad. The FNP can be made by template-assisted replication or template-based synthesis methods, which will be driven by the development of the preparation technologies for ordered nanostructure arrays. The present work would potentially provide a new solution for the Cu/ultra-low-к CMP process.

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“…[6−10] Implantation range (the standard deviation σ and the projection range R p of the implanted ions) damage and defects [11] after high temperature annealing are often simulated by the Monte Carlo method. [12,13] The ion-implantation technique is often used to fabricate SiC devices, such as metalsemiconductor field-transistors (MESFETs), [14] high electron mobility transistors (HEMTs), static induction transistors (SITs) and so on. [15] So ohmic contacts usually need to be formed on the ion-implantation layers; it is desirable to study the characteristics of ohmic contacts on the implanted layer, such as the specific contact resistance ρ c , and the sheet resistance R sh of the implanted layer.…”

Section: Introductionmentioning

confidence: 99%

Ohmic contacts of 4H-SiC on ion-implantation layers

Wang

Zhang

et al. 2010

Chinese Phys. B

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The ohmic contacts of 4H-SiC are fabricated on nitrogen ion implanted layers made by performing box-like-profile implantation three and four times. Implantation parameters such as the standard deviation σ and the projection range Rp are calculated by the Monte Carlo simulator TRIM. Ni/Cr ohmic contacts on Si-face 4H-SiC implantation layers are measured by transfer length methods (TLMs). The results show that the values of sheet resistance R sh are 30 kΩ/ and 4.9 kΩ/ and the values of specific contact resistance ρc of ohmic contacts are 7.1 × 10 −4 Ω • cm 2 and 9.5 × 10 −5 Ω • cm 2 for the implanted layers with implantation performed three and four times respectively.

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Effect of polishing pad with holes in electro-chemical mechanical planarization

Cited by 17 publications

References 28 publications

Removal Rate Simulation of Copper Electrochemical Mechanical Planarization

Removal Rate Simulation of Copper Electrochemical Mechanical Planarization

A flexible nanobrush pad for the chemical mechanical planarization of Cu/ultra-low-к materials

Ohmic contacts of 4H-SiC on ion-implantation layers

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