Effect of Polymer Binders on UV-Responsive Organic Thin-Film Phototransistors with Benzothienobenzothiophene Semiconductor

Ljubic, Darko; Smithson, Chad S.; Wu, Yiliang; Zhu, Shiping

doi:10.1021/acsami.5b09001

Cited by 19 publications

(12 citation statements)

References 43 publications

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“…Electron. The responsivity (R C ) of the present semitransparent OFETs reached ≈2.4 mA W −1 (Ag: 15 nm) and ≈3.1 mA W −1 (Ag: 20 nm) (note that a commercialized silicon photodiode without any optical transparency normally shows ≈123.73 mA W −1 at the UV light intensity of ≈1049.627 mW cm −2 (365 nm) [41][42][43][44] ). 2017, 3, 1700162 the higher resistance for the thinner Ag electrodes.…”

Section: Wwwadvelectronicmatdementioning

confidence: 77%

UV‐Sensing Semitransparent Organic Field‐Effect Transistors with Wide Bandgap Small Molecular Channel and Polymeric Gate‐Insulating Layers

Lee

Kim

et al. 2017

Adv Elect Materials

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This study demonstrates UV‐sensing semitransparent organic field‐effect transistors (OFETs) with wide bandgap small molecular channel and polymeric gate‐insulating layers. N,N′‐di(1‐naphthyl)‐N,N′‐diphenyl‐(1,1′‐biphenyl)‐4,4′‐diamine (NPB) is employed as the wide bandgap channel layer, while poly(methyl methacrylate) is introduced as the wide bandgap gate‐insulating layer. The performance of OFETs is optimized by NPB thickness control and thermal treatment. Results show that the best device performance (on/off ratio = 4.7 × 106 and hole mobility = 4.2 × 10−5 cm2 V−1 s−1) is achieved by thermal treatment of the 130 nm thick NPB layers at 70 °C for 30 min leading to a noticeably changed surface morphology in the NPB layers. The optimized OFETs exhibit excellent operation stability without hysteresis, while those with semitransparent silver electrodes deliver quite a good transparency. The semitransparent OFETs can sensitively detect a UV light with high stability even though no photoresponse is measured under a visible light.

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Section: Wwwadvelectronicmatdementioning

confidence: 77%

UV‐Sensing Semitransparent Organic Field‐Effect Transistors with Wide Bandgap Small Molecular Channel and Polymeric Gate‐Insulating Layers

Lee

Kim

et al. 2017

Adv Elect Materials

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“…When the devices were in the off-state under a sub-threshold voltage, the I photo /I dark ratio increased with the increase in gate voltage, owing to the increased photocurrent with a contribution from the positively shifted threshold voltage. When the phototransistors were turned on by applying more negative gate voltages, a significant decrease in the I photo / I dark ratio could be observed; the ratio disparities of the devices, caused by the different illumination intensities, rapidly diminished, as the electrical contribution to the charge carrier generation was dominant after the threshold was reached [ 48 , 49 ]. The maximum I photo / I dark ratio significantly increased with the incident illumination power increased; it could reach a value as high as 2.2 × 10 6 under a gate voltage around − 30 V when the power density of the white light was 10 mW cm −2 , as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

Chen

Chu

et al. 2018

Nano-Micro Lett.

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The outstanding performances of nanostructured all-inorganic CsPbX3 (X = I, Br, Cl) perovskites in optoelectronic applications can be attributed to their unique combination of a suitable bandgap, high absorption coefficient, and long carrier lifetime, which are desirable for photodetectors. However, the photosensing performances of the CsPbI3 nanomaterials are limited by their low charge-transport efficiency. In this study, a phototransistor with a bilayer structure of an organic semiconductor layer of 2,7-dioctyl [1] benzothieno[3,2-b] [1] benzothiophene and CsPbI3 nanorod layer was fabricated. The high-quality CsPbI3 nanorod layer obtained using a simple dip-coating method provided decent transistor performance of the hybrid transistor device. The perovskite layer efficiently absorbs light, while the organic semiconductor layer acts as a transport channel for injected photogenerated carriers and provides gate modulation. The hybrid phototransistor exhibits high performance owing to the synergistic function of the photogating effect and field effect in the transistor, with a photoresponsivity as high as 4300 A W−1, ultra-high photosensitivity of 2.2 × 106, and excellent stability over 1 month. This study provides a strategy to combine the advantages of perovskite nanorods and organic semiconductors in fabrication of high-performance photodetectors.Electronic supplementary materialThe online version of this article (10.1007/s40820-018-0210-8) contains supplementary material, which is available to authorized users.

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“…It is widely reported in the literature that UV and IR illumination ultimately affects the properties of the materials and ultimately the device response too [35] , [36] , [37] , [38] . The effect from the UV and IR illumination could be reversible (concerning physical properties) or irreversible (concerning structures).…”

Section: Resultsmentioning

confidence: 99%

A novel and stable ultraviolet and infrared intensity sensor in impedance/capacitance modes fabricated from degraded CH3NH3PbI3-xClx perovskite materials

Qasuria

Fatima

Karimov

et al. 2020

Journal of Materials Research and Technology

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The present situation of COVID-19 diverted our focus towards utilizing the degraded solar cells for sensor application, this will help in global energy harvesting. So, here is our successful effort to reuse already degraded solar cells as ultraviolet (UV) and infrared (IR) sensor. The spin-coated perovskite (CH 3 NH 3 PbI 3-X Cl X ) has been already tested for visible light spectrum, as an extension to that now it is utilized as UV and IR intensity sensors to cover the whole spectrum. The employed CH 3 NH 3 PbI 3-X Cl X material was used after its efficiency loss has been reached to a saturation point in photovoltaic devices. Each deposited layer was investigated from UV to the IR absorption spectrum for deepening study through UV–vis spectroscopy. In the sandwiched architecture possessing FTO/PEDOT: PSS/Perovskite/PC 61 BM/CdS/Au symmetry, the perovskite film has been employed as an absorbent layer, however, other layers participation also plays a key role. The resultant device yielded very good sensing performance because of the enhanced excitons generation which is attributed to the precise selection of the interfacial materials, e.g. CdS and PC 61 BM as an ETM and PEDOT: PSS as HTM. The impedance and capacitance of the devices within 0.01−200 kHz under varied UV and IR illumination intensities were investigated. Measurements showed that as the intensity of the light increased i.e., UV (0–200 W/m 2 ) and IR (0–5800 W/m 2 ), impedance decreased while capacitance increased. The current results are attributed to the increase in the concentration of charges i.e., electron-hole pairs generation depending on the built-in capacitance and frequency of the charges.

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Effect of Polymer Binders on UV-Responsive Organic Thin-Film Phototransistors with Benzothienobenzothiophene Semiconductor

Cited by 19 publications

References 43 publications

UV‐Sensing Semitransparent Organic Field‐Effect Transistors with Wide Bandgap Small Molecular Channel and Polymeric Gate‐Insulating Layers

UV‐Sensing Semitransparent Organic Field‐Effect Transistors with Wide Bandgap Small Molecular Channel and Polymeric Gate‐Insulating Layers

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

A novel and stable ultraviolet and infrared intensity sensor in impedance/capacitance modes fabricated from degraded CH3NH3PbI3-xClx perovskite materials

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