Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Kasahara, Kenji; Higashi, Hidenori; Nakano, Maasa; Nagatomi, Yuta; Yamamoto, Keisuke; Nakashima, Hiroshi; Hamaya, Kohei

doi:10.1016/j.mssp.2016.07.004

Cited by 5 publications

(2 citation statements)

References 23 publications

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“…Quasi-single-crystalline, epi-like, and polycrystalline germanium (poly-Ge) TFTs on insulating substrates are a candidate for next-generation TFTs owing to the excellent electrical properties of Ge, their suitability for CMOS applications, and their LT fabrication process. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] In general, the poly-Ge thin film exhibits strong p-type characteristics. Therefore, p-ch poly-Ge TFTs are widely used as junctionless (JL) TFTs, due to the difficulties of adjusting the threshold voltage (V th ) in inversion-type poly-Ge TFTs.…”

Section: Introductionmentioning

confidence: 99%

Double-gate polycrystalline-germanium thin-film transistors using copper-induced crystallization on flexible plastic substrate

Utsumi¹,

Nishiguchi²,

Miyazaki³

et al. 2019

Jpn. J. Appl. Phys.

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In this study, planar metal double-gate (DG) p-channel (p-ch) junctionless polycrystalline germanium thin-film transistors (TFTs) were fabricated on a spin-coated polyimide (PI) substrate via metal-induced crystallization (MIC) using copper (Cu) and an aluminum-induced lateral metallization source-drain. The maximum nominal mobility, which was calculated from transconductance under the simultaneous operation of the top and bottom gates, was 32 cm 2 V −1 s −1 , and an on/off ratio of 2 × 10 3 was achieved owing to the Cu-MIC poly-Ge film, low parasitic resistance of the source-drain, and the fully depleted channel. Moreover, the performance of the DG Cu-MIC poly-Ge TFT did not drastically degrade once the PI had been peeled off the glass substrate. The proposed poly-Ge TFT can be used to fabricate p-ch TFTs on plastic substrates.

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Section: Introductionmentioning

confidence: 99%

Double-gate polycrystalline-germanium thin-film transistors using copper-induced crystallization on flexible plastic substrate

Utsumi¹,

Nishiguchi²,

Miyazaki³

et al. 2019

Jpn. J. Appl. Phys.

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“…After 10 days of annealing at 300°C, Al regions were interconnected with each other; in other words, layer exchange occurred. Furthermore, there are many studies where the annealing time is too long for Au‐induced layer exchange crystallization . In this study, Au‐rich regions were not interconnected with each other so no layer exchange was observed.…”

Section: Resultsmentioning

confidence: 81%

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Kabaçelik

Kulakçı

Turan

et al. 2018

Surface & Interface Analysis

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Gold-induced (Au-) crystallization of amorphous germanium (α-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films yielded crystallization at temperature as low as 300°Cfor 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current-voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm −1 for annealed samples grown on aluminum-doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge-based electronic and photovoltaic applications.

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A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization

Singh

Amaladass

Parida

et al. 2021

Applied Surface Science

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Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Cited by 5 publications

References 23 publications

Double-gate polycrystalline-germanium thin-film transistors using copper-induced crystallization on flexible plastic substrate

Double-gate polycrystalline-germanium thin-film transistors using copper-induced crystallization on flexible plastic substrate

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization

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