Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper

Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films

“…25 The results of the investigation of the polycrystalline Cu oxide films annealed below 600 o C were reported that the polycrystalline phases were converted to single crystalline or continuously existed mixing phases of Cu 2 O and CuO. 20,26,27 According to the equilibrium phase diagram of the Cu-O system, CuO is the stable phase up to 300 o C even at low oxygen partial pressure.…”

“…40 The obtained direct band gap values showed the blue shift up to 200 o C and then red shift was observed. This phenomenon was also reported in Cu oxide thin films deposited by thermal oxidation of metallic Cu films between 100 and 450 o C. 20 The optical band gap was determined by several parameters such as the grain growth, crystallinity, and stress of the films. It is well known that the increase of grain size could cause the red shift.…”

“…Figueiredo et al have reported that the effect of post-annealing of Cu oxide thin films obtained by thermal oxidation and revealed that the crystallinity and grain size of thin films were dependent on the post-annealing temperature. 20 The influence of other parameters such as r.f. power and oxygen flow rate on Cu oxide thin films prepared by reactive magnetron sputtering was studied by Ogwu et al.…”

Oxide semiconductors: Order within the disorder

“…The data reveal devices with I ON /I OFF ratio of about 10 2 , V on ≅ -21 V and µ SAT ≈0.09 cm 2 V -1 s -1 . The observed behavior is attributed to the change of Cu oxidation state (from Cu + to Cu 2+) [77], with some possible surface state passivation induced by N 2 , after annealing the device in a N 2 atmosphere at 350 °C. This is still an open discussion that requires further work, aiming for a better understanding of the device behavior and the overall improvement of the electrical characteristics achieved.…”

Characteristics of p-Cu2O/n-Si Heterojunction Photodiode made by Rapid Thermal Oxidation

“…Several studies showed the potential use of Cu 2 O for gas sensing [3], photo-degradation of dye molecule [4], CO oxidation [5], and solar cells [6]. Thin films of Cu 2 O had been grown by many techniques, such as electrodeposition [7], spraying [8], CVD [9], thermal oxidation [10], MBE [11], plasma based ion implantation and deposition [12] and reactive sputtering [13]. The potential application of Cu 2 Obased heterojunctions film in electronics requires understanding its physical properties and transport mechanism.…”