Effect of precursor on growth and morphology of MoS2 monolayer and multilayer

Ganorkar, Shraddha; Kim, Jungyoon; Kim, Young‐Hwan; Kim, Seong-II

doi:10.1016/j.jpcs.2015.07.016

Cited by 51 publications

(20 citation statements)

References 22 publications

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“…The PL intensity is plotted on a log scale to reveal any relatively weak exciton peaks, such as the B exciton for MoS 2 . The PL for the monolayer regions of MoS 2 shows strong PL with a very low B/A intensity ratio indicative of a high-quality growth with low defect density. , The A 1g and E 2g 1 lines in the Raman spectra show an absolute separation of 21 cm –1 for the monolayer regions consistent with other CVD grown monolayer material. , For WS 2 , the intense PL for the A exciton is located at 630 nm while the B exciton is higher in energy than our excitation laser (532 nm). , Monolayer WS 2 displays a strong 2LA Raman mode at 351 cm –1 and a weak A 1g mode at 417.5 cm –1 , where, with increasing number of layers, the 2LA mode is red-shifted while the A 1g mode is blue-shifted, causing the separation between the two modes to increase from 66.5 cm –1 for monolayer to 69 cm –1 for multilayer . The PL spectrum of MoSe 2 [Figure a] shows the characteristic A excitonic state for different numbers of layers.…”

Section: Resultssupporting

confidence: 74%

“…41,42 The A 1g and E 2g 1 lines in the Raman spectra show an absolute separation of 21 cm −1 for the monolayer regions consistent with other CVD grown monolayer material. 43,44 For WS 2 , the intense PL for the A exciton is located at 630 nm while the B exciton is higher in energy than our excitation laser (532 nm). 18,45 Monolayer WS 2 displays a strong 2LA Raman mode at 351 cm −1 and a weak A 1g mode at 417.5 cm −1 , where, with increasing number of layers, the 2LA mode is red-shifted while the A 1g mode is blue-shifted, causing the separation between the two modes to increase from 66.5 cm −1 for monolayer to 69 cm −1 for multilayer.…”

Section: ■ Results and Discussionmentioning

confidence: 59%

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Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts

et al. 2019

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The difficulty of processing two-dimensional (2D) transition metal dichalcogenide (TMD) materials into working devices with any scalability is one of the largest impediments to capitalizing on their industrial promise. Here, we describe a versatile, simple, and scalable technique to directly grow self-contacted thin-film materials over a range of TMDs (MoS 2 , MoSe 2 , WS 2 , and WSe 2 ), where predeposited bulk metallic contacts serve as the nucleation site for the TMD material to grow, forming naturally contacted device structures in a single step. The conditions for growth as well as optical and physical properties are reported. Because the material grows controllably around the lithographically defined patterns, wafer scale circuits and complex device geometries can be envisioned, including lateral heterostructures of different TMD materials.

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Section: Resultssupporting

confidence: 74%

Section: ■ Results and Discussionmentioning

confidence: 59%

Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts

et al. 2019

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“…A transmission electron microscopy (TEM) image of the stacked MoS 2 layers is shown in Figure b. Ganorkar et al found that it is easier to form a continuous thin film of MoS 2 synthesized from MoCl 5 than MoS 2 synthesized from MoO x , due to the one-step reaction (MoCl 5 +2S → MoS 2 +5Cl) . MoS 2 synthesis parameters using MoCl 5 sulfuration are shown in Table .…”

Section: Synthesis Of Mos2mentioning

confidence: 99%

Fabricating Molybdenum Disulfide Memristors

Qiao

Hirtz

et al. 2019

ACS Appl. Electron. Mater.

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Memristors with simple two-terminal structures have great potential for use in high-density memory and neuromorphic devices. Many neuromorphic behaviors can be imitated using a two-terminal device. Molybdenum disulfide (MoS2) is a two-dimensional (2D) semiconductor ideal for use as the resistive switching layer in memristor applications. Compared with traditional transition metal oxides, 2D MoS2 memristors have ultrathin thickness, good flexibility, high transparence, and tunable characteristics. Because of the extensive research in this field in recent years, many methods for synthesizing large-area (4–6 in.) monolayer MoS2 have been investigated, one of the most promising being chemical vapor deposition. In this Review, the characteristics of MoS2 will first be introduced. Thereafter, methods related to the growth and fabrication of MoS2, such as mechanical exfoliation, solution-based synthesis, and vacuum processes, will be reviewed. Moreover, memristors based on MoS2 will be divided and introduced according to the resistance switching mechanisms. Finally, we will conclude by discussing the challenges and perspectives related to MoS2 memristors.

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“…After the popularization of graphene, different layered materials have been discovered, including borophene 1 , hexagonal boron nitride hBN 2 , and transition metal dichalcogenides 3 (TMDCs). Molybdenum disulfide (MoS2), a member of the family of TMDCs, is a semiconductor whose synthesis has been quite well developed and established by different approaches [4][5][6][7][8][9] . In the case of a single layer (thickness around 6 Å) MoS2 exhibits a direct bandgap 10 (≈1.82 eV), reasonable electrical conductivity, large spin-orbit coupling, strong exciton binding, which makes it suitable for several optoelectronic applications 11,12 .…”

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confidence: 99%

“…1) can be present on the substrate, careful attention is paid to avoid thermal or optical crosstalk. Moreover, we use Raman spectroscopy to monitor the frequency difference between the 𝐸 2𝑔 and 𝐴 1𝑔 peaks 7 to select only the single-layered MoS2 crystals (see Suppl. Thermal scans are acquired by means of thermoresistive SThM, with two different thermal probes 25 .…”

mentioning

confidence: 99%

Thermal boundary conductance of CVD-grown MoS2 monolayer-on-silica substrate determined by scanning thermal microscopy

Frausto-Avila

Arellano‐Arreola

Yáñez‐Limón

et al. 2022

Applied Physics Letters

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We characterize heat dissipation of supported molybdenum disulfide (MoS2) monolayers grown by chemical vapor deposition by means of ambient-condition scanning thermal microscopy (SThM). We find that the thermal boundary conductance of the MoS2 monolayers in contact with 300 nm of SiO2 is around 4.6 ± 2 MW m−2 K−1. This value is in the low range of the values determined for exfoliated flakes with other techniques such as Raman thermometry, which span an order of magnitude (0.44–50 MW m−2 K−1), and underlines the dispersion of measurements. The sensitivity to the in-plane thermal conductivity of supported MoS2 is very low, highlighting that the thermal boundary conductance is the key driver of heat dissipation for the MoS2 monolayer when it is not suspended. In addition, this work also demonstrates that SThM calibration using different thicknesses of SiO2, initially aimed at being used with bulk materials can be extended to 2D materials.

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Effect of precursor on growth and morphology of MoS2 monolayer and multilayer

Cited by 51 publications

References 22 publications

Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts

Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts

Fabricating Molybdenum Disulfide Memristors

Thermal boundary conductance of CVD-grown MoS2 monolayer-on-silica substrate determined by scanning thermal microscopy

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