Fabricating Molybdenum Disulfide Memristors

Abstract

Memristors with simple two-terminal structures have great potential for use in high-density memory and neuromorphic devices. Many neuromorphic behaviors can be imitated using a two-terminal device. Molybdenum disulfide (MoS2) is a two-dimensional (2D) semiconductor ideal for use as the resistive switching layer in memristor applications. Compared with traditional transition metal oxides, 2D MoS2 memristors have ultrathin thickness, good flexibility, high transparence, and tunable characteristics. Because of the extensive research in this field in recent years, many methods for synthesizing large-area (4–6 in.) monolayer MoS2 have been investigated, one of the most promising being chemical vapor deposition. In this Review, the characteristics of MoS2 will first be introduced. Thereafter, methods related to the growth and fabrication of MoS2, such as mechanical exfoliation, solution-based synthesis, and vacuum processes, will be reviewed. Moreover, memristors based on MoS2 will be divided and introduced according to the resistance switching mechanisms. Finally, we will conclude by discussing the challenges and perspectives related to MoS2 memristors.

Bi2O2Se-Based Memristor-Aided Logic

“…Recently, the integration of two-dimensional materials (2DMs) into memristors has been the new research focus in the electronic community, ranging from semimetallic graphene , to semiconducting transition metal dichalcogenides, − black phosphorus (BP), two-dimensional hexagonal boron nitride (h-BN), , perovskite, , and MXene . Their dangling-bond-free interface, weak surface van der Waals interaction, and atomically thin nature facilitate versatile and fantastic device properties in memristor architectures. − (1) 2DMs as the electrode: for example, graphene with its high in-plane carrier mobility and van der Waals interface (dimensionally anisotropic, in other words) leads to both a high mobility (10 3 cm 2 V –1 s –1 ) and a high on–off ratio (10 7 ) and a high thermal stability up to 340 °C. , (2) 2DMs as the insertion layer: via a well-controlled defect density of a graphene layer, the memristor can be switched between a fast threshold switching mode with a high on-state current and an RS memory mode with a low power dissipation .…”

Recent Advances in Two-Dimensional MoS2 Nanosheets for Environmental Application

“…Hydrothermal methods have been attracting increasing interest nowadays, because of their highly reactive reactants; the formation of metastable, unique concentrated states; easy control of the solution; lower energy consumption; and less air contamination (without using any strong acid or surface passivation reagent). − Generally, the hydrothermal reaction refers to the reduction of molybdate using reductant (e.g., thiourea) and organics (e.g., polyethylene glycol as templating material) into MoS 2 nanosheet at high temperature and high pressure, which is a simple, scalable, and applicable method to synthesize MoS 2 with the large surface area and high electrical properties nowadays. − Massey and co-workers employed polyethylene glycol as a template to synthesize scalable and facile MoS 2 nanosheet by the one-pot hydrothermal methods . However, Lin et al fabricated the large-scale MoS 2 thin layers by reducing MoO 3 at 500 °C under H 2 conditions and then sulfurizing at 1000 °C using sulfur, featuring the flexible electronics and optoelectronics applications .…”

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: A first-principles study

“…A commonly used one is via CVD growth [27]. Another commonly used one is mechanical exfoliation [28,29]. Compared with mechanically exfoliated samples, the CVD growth process, often taking place at relatively high temperatures, induces various native defects, including point defects, grain boundaries and edges [30].…”