Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode

Wen-wen, 孙文文 Sun; Fang, 方芳 Fang; Xiao-lan, 王小兰 Wang; Chang-da, 郑畅达 Zheng; Shuan, 潘 拴 Pan

doi:10.3788/fgxb20204104.0461

Cited by 2 publications

(1 citation statement)

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“…First of all, according to different materials and devices, the temperature selected is different. For example, the white LED is 85–125 ℃ 7 , 8 , the GaN based device is 85 ℃ 9 , the In Pb material is 150 ℃ 10 , the erbium ytterbium co doped fiber amplifier is 85 ℃ 11 , the organic material fluorosilicone rubber is 200 ℃ 12 , the InGaAs photodiode is 100–300 ℃ 13 , and the MEMS gyroscope is 125 ℃ 14 . In general, the influence of high temperature treatment on devices is mainly reflected in the influence of temperature stress on electron mobility, which leads to the formation of voids or metal compounds in materials, which changes the electrical properties, the oxidation of metals caused by the presence of air oxygen, and the degradation of electrical and thermal properties caused by the denaturation of packaging materials.…”

Section: Methodsmentioning

confidence: 99%

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

Wang,

Su,

Wang

et al. 2023

Sci Rep

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The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 $$\times$$ × 1013/cm2, and the capture cross section is $$\sigma$$ σ = 8.5 $$\times$$ × 1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test.

show abstract

Section: Methodsmentioning

confidence: 99%

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

Wang,

Su,

Wang

et al. 2023

Sci Rep

View full text Add to dashboard Cite

show abstract

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

Wang

et al. 2023

Preprint

View full text Add to dashboard Cite

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8×1013/cm2, and the capture cross section is σ = 8.5×1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu-Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test.

show abstract

Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode

Cited by 2 publications

References 0 publications

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

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