Effect of Process Parameters on CNTFET

Sharma, Archana; Kumar, Adarsh; Sharma, Suresh C.

doi:10.1007/978-981-16-9523-0_44

Cited by 2 publications

(3 citation statements)

References 13 publications

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“…High carrier density is typically associated with the lowvoltage operation of FETs [71]. We calculated the carrier density using the equation, =…”

Section: Resultsmentioning

confidence: 99%

Solution-processable low-voltage carbon nanotube field-effect transistors with high-k relaxor ferroelectric polymer gate insulator

Yang,

Moon,

Han

et al. 2024

Nanotechnology

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Achieving energy-efficient and high-performance field-effect transistors (FETs) is one of the most important goals for future electronic devices. This paper reports semiconducting single-walled carbon nanotube FETs (s-SWNT-FETs) with an optimized high-k relaxor ferroelectric insulator P(VDF-TrFE-CFE) thickness for low-voltage operation. The s-SWNT-FETs with an optimized thickness (~ 800 nm) of the high-k insulator exhibited the highest average mobility of 14.4 cm2V-1s-1 at the drain voltage (ID) of 1 V, with a high current on/off ratio (Ion/off >105). The optimized device performance resulted from the suppressed gate leakage current (IG) and a sufficiently large capacitance (> 50 nFcm-2) of the insulating layer. Despite the extremely high capacitance (> 100 nFcm-2) of the insulating layer, an insufficient thickness (< 450 nm) induces a high IG, leading to reduced ID and mobility of s-SWNT-FETs. Conversely, an overly thick insulator (> 1200 nm) cannot introduce sufficient capacitance, resulting in limited device performance. The large capacitance and sufficient breakdown voltage of the insulating layer with an appropriate thickness significantly improved p-type performance. However, a reduced n-type performance was observed owing to the increased electron trap density caused by fluorine proportional to the insulator thickness. Hence, precise control of the insulator thickness is crucial for achieving low-voltage operation with enhanced s-SWNT-FET performance.

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“…High carrier density is typically associated with the lowvoltage operation of FETs [71]. We calculated the carrier density using the equation, =…”

Section: Resultsmentioning

confidence: 99%

Solution-processable low-voltage carbon nanotube field-effect transistors with high-k relaxor ferroelectric polymer gate insulator

Yang,

Moon,

Han

et al. 2024

Nanotechnology

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“…Where,  is a characteristic length of the decaying electrostatic potential that can be interpreted as an effective SB width. The value of  is determined by (5) provided that CNT diameter CNT d is smaller than oxide thickness ox t as in case of gate all around CNTFET [30].…”

Section: Figure 2 Energy Band Diagram Of Cntfetmentioning

confidence: 99%

“…Moreover, there are several challenges of scaling down a transistor size like short channel effect and tunneling effect, etc... Unfortunately, the demand of the internet of things (IOT), machine learning, artificial intelligence(AI), and internet traffic requires continuing in scaling down transistor [1][2][3].CNFETs are among the most promising candidates to replace Si-MOSFET technology below 7nm node [4,5] .That is because, they provide high carrier velocity, quasi ballistic transport, and quasi-one-dimensional (1-D) structure. Considering the laterally mentioned CNTFET characteristics, the Schottky barrier effect dominates the performance of the device.…”

Section: Introductionmentioning

confidence: 99%

A Novel Analytical Model of Ballistic 1-D Schottky Barrier GAA CNTFET Including BTBT Effect

Abdalla,

Matter,

El-Mokadem

et al. 2023

Preprint

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In this work a novel analytical model for carbon nanotube transistor (CNTFET) including band to band tunneling (BTBT) effect has been proposed. Consequently, outstanding routes for the design and simulation of ultra-scaled down circuits have become available. Basically, this model has been established on solving analytically the current Landauer integral. Such a solution has been obtained via a set of approximations for Fermi-Dirac distribution function, Wentzel– Kramers–Brillouin (WKB) transmission probability and band to band tunneling probability. In this regard, the suggested approach has been applied to model one dimensional (1-D) Schottky barrier Gate all around (GAA) CNTFET. The introduced model shows a high degree of closure to the experimental data represented in an error of 4.5% for the on current, 1.6% for the threshold voltage and 1.35% for the drain induced barrier lowering (DIBL). The resultant of this effort is reflected in merging of both the accuracy and the speed of the circuit simulator.

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Effect of Process Parameters on CNTFET

Cited by 2 publications

References 13 publications

Solution-processable low-voltage carbon nanotube field-effect transistors with high-k relaxor ferroelectric polymer gate insulator

Solution-processable low-voltage carbon nanotube field-effect transistors with high-k relaxor ferroelectric polymer gate insulator

A Novel Analytical Model of Ballistic 1-D Schottky Barrier GAA CNTFET Including BTBT Effect

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