2011
DOI: 10.1016/j.jeurceramsoc.2010.10.024
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Effect of processing method on physical properties of Nb2O5

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Cited by 71 publications
(49 citation statements)
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“…Both spectra shown, with peaks at ∼ 235, ∼ 315, and ∼ 700 cm −1 , are in excellent agreement with those reported in the literature for T-Nb 2 O 5 . [8,21,22] The two low wave-number peaks have been loosely ascribed to Nb-O-Nb bending modes and that at ∼700 cm −1 to Nb-O stretching modes. As shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Both spectra shown, with peaks at ∼ 235, ∼ 315, and ∼ 700 cm −1 , are in excellent agreement with those reported in the literature for T-Nb 2 O 5 . [8,21,22] The two low wave-number peaks have been loosely ascribed to Nb-O-Nb bending modes and that at ∼700 cm −1 to Nb-O stretching modes. As shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…In general the crystallization conditions of each Nb 2 O 5 structure depends on the starting materials, synthesis methods and heat treatment conditions. In particular the T-Nb 2 O 5 net parameters are: a = 6.17Å; b = 29.32Å; c = 3.94Å, and its crystalline structures consist of 4 × 4 blocks of corner-shared NbO 6 octahedra, with connected blocks sharing the edges of the octahedron 11 .…”
Section: Introductionmentioning
confidence: 99%
“…Soares et al 11 reported the synthesis of Nb 2 O 5 samples by means of the Laser Floating Zone (LFZ) technique and the solid-state reaction in order to study some of their physical properties as a function of synthesis conditions. The authors found a structural orthorhombic to monoclinic phase transition observed in samples sintered at temperatures higher than 800°C.…”
Section: Introductionmentioning
confidence: 99%
“…It is known that Nb forms different stable oxides such NbO, NbO 2 and Nb 2 O 5 , that exhibit very distinct electrical properties: NbO presents a typical metallic behaviour, Nb 2 O 5 is a wide band gap semiconductor (3.4-5.3 eV), and Nb 12 O 29 (which has a stoichiometry very close to Nb 2 O 5 ) can be a good transparent conductive oxide (TCO) [1][2][3][4][5]. More recently, niobium oxides have been explored for the development of resistive memories due to their resistive switching mechanisms based on the presence of oxygen vacancies [6][7][8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%