Effect of pulsed laser deposition on the physical properties of ZnO nanocrystalline gas sensors

Khudiar, Ausama I.; Ofui, Attared M.

doi:10.1016/j.optmat.2021.111010

Cited by 12 publications

(4 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because the crystal defects prevent crystal growth, the crystalline size is small at the deposition position where the E k of the ablated particles is large. 41,42) This situation is consistent with the zone model proposed by Anders. 43) Therefore, the variation in crystalline size of β-NaGaO 2 , i.e., the crystalline size decreasing for films deposited at a smaller d TS and L, is reasonably understood by the variation in E k of the ablated particles dependent on d TS and L.…”

Section: Origin Of the Variation Of Morphology And Phasesupporting

confidence: 91%

Pulsed laser deposition of β-NaGaO₂: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume

Suzuki

Omata

2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Thin films of β-NaGaO2, a precursor material of β-CuGaO2, were fabricated using pulsed laser deposition. The phase and morphology of these films depended on the deposition position, i.e., the target-substrate distance and distance from the central plume axis. Three phases appeared in the films, namely a Na-deficient and stoichiometric β-NaGaO2, amorphous with a Na fraction with total cations, x Na, of ~0.375, and unidentified phase with x Na of ~0.57. These three phases formed four characteristic textures. The variation in phase and morphology is discussed and explained in terms of the spatial distribution of the Na fraction and kinetic energy of ablated particles deposited on the substrate. By using the obtained stoichiometric β-NaGaO2 film, a stoichiometric β-CuGaO2 film was successfully fabricated. Its energy band gap was determined to be 1.64 eV, which is approximately 0.1 eV larger than that previously reported for Cu-deficient β-Cu0.9GaO2-δ.

show abstract

Section: Origin Of the Variation Of Morphology And Phasesupporting

confidence: 91%

Pulsed laser deposition of β-NaGaO₂: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume

Suzuki

Omata

2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Such behavior indicates an increase in the crystalline size of the particles (C.S) from 25.5 Å to 37.7 Å. These results were consistent with many kinds of research for the deposition of metals oxides by pulse laser energy [16]. When compared with [Card No.…”

Section: 𝑛𝜆 2𝑑 𝑠𝑖𝑛𝜃supporting

confidence: 87%

The Structural and Optical Properties of Nanocrystalline Fe3O4 Thin Films Prepared by PLD

Abdulkareem¹,

Kadhim²,

Shams³

2022

ETJ

View full text Add to dashboard Cite

 Fe3O4 had a cubic spinel structure because of the strongest reflection from 311 planes.  Increasing the pulse laser energy reduces the energy gap of films.  When the pulses laser energy increases, the absorption and the film's thickness increase.In this study, thin films of pure iron oxide (Fe3O4) were prepared using pulsed laser deposition technique under vacuum (2×10 -3 mbar) using Nd: YAG laser at different laser energies (700, 800, 900, and 1000 mJ) on quartz slides at the substrate temperature of 200 °C with different thickness (170, 190, 220, and 250 nm). The prepared thin films were examined using different techniques. The Xray diffraction showed a polycrystalline structure of cubic Fe3O4 phase, enhanced its crystallinity, and increased the crystalline size when increasing the laser energy to 1000 mJ. The results revealed that high transparency samples decreased pulse laser energy. As the laser pulse power increases, the transparency decreases from 91% to 61%, where optical properties deteriorate significantly. The bandgap values were detected to be 3.9 eV, 3.75 eV, 3.21 eV, and 3 eV when the laser energies were increased with thickness (170-250) nm.In addition, the extinction coefficient, dielectric constants, optical constants, and refractive constants were studied.

show abstract

“…Zinc oxide (ZnO) is a semiconductor oxide nanomaterial that crystallizes in wurtzite structure and have direct bandgap of 3.37eV with an exciton binding energy of 60 meV at room temperature. Due to these unique properties, ZnO is a potential candidate for piezoelectric transducers [1], optical waveguides [2], acousto-optic media [3], conductive gas sensors [4] and TCCs [5].…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing Duration on the Structural, Optical and Electrical Properties of ZnO Layers Deposited Using the Dip-Coating Method

Toe,

Matsuda,

Yaacob

et al. 2024

View full text Add to dashboard Cite

Zinc sol deposited via dip coating on Fluorine-doped Tin Oxide (FTO) coated glasses were annealed at 450 °C in normal ambient to form ZnO layers. The effect of annealing durations, i.e. 30, 60, 90, and 120 min on their surface morphology, crystallinity, optical, electrical and Dye-Sensitized Solar Cells (DSSCs) performance were studied. The XRD analyses indicated the formation of wurtzite ZnO after 60 min of annealing. It is noted that the ZnO layers annealed at 60-120 min showed good crystal quality attributed to its sharp, narrow and strong diffraction peaks. Generally, ZnO layers with uniform thickness have been deposited on the FTO coated glasses. The thickness of ZnO layers decreased from 0.88, 0.78, 0.76, and 0.73 mm when the annealing duration increased from 30 to 120 min due to removal of hydrocarbons from the zinc sol. The O at. % increased with annealing duration, indicating that more oxygen reacted with zinc to form ZnO. The ZnO thin film annealed at 60 min had relatively low sheet resistance (9.6 W) with optical bandgap of 3.04 eV. This suggests that ZnO layers annealed at 60 min have the largest amount of oxygen vacancies that contributed electrons for charges transportation in the layers. Besides, the Room Temperature Photoluminescence (RTPL) analyses showed that the ZnO thin film annealed for 60 min showed IUV/IVis ratio = 0.89, suggesting better crystal quality compared to shorter annealing duration.

show abstract

Effect of pulsed laser deposition on the physical properties of ZnO nanocrystalline gas sensors

Cited by 12 publications

References 36 publications

Pulsed laser deposition of β-NaGaO₂: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume

Pulsed laser deposition of β-NaGaO₂: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume

The Structural and Optical Properties of Nanocrystalline Fe3O4 Thin Films Prepared by PLD

Influence of Annealing Duration on the Structural, Optical and Electrical Properties of ZnO Layers Deposited Using the Dip-Coating Method

Contact Info

Product

Resources

About

Effect of pulsed laser deposition on the physical properties of ZnO nanocrystalline gas sensors

Cited by 12 publications

References 36 publications

Pulsed laser deposition of β-NaGaO2: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume

Pulsed laser deposition of β-NaGaO2: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume

The Structural and Optical Properties of Nanocrystalline Fe3O4 Thin Films Prepared by PLD

Influence of Annealing Duration on the Structural, Optical and Electrical Properties of ZnO Layers Deposited Using the Dip-Coating Method

Contact Info

Product

Resources

About

Pulsed laser deposition of β-NaGaO₂: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume

Pulsed laser deposition of β-NaGaO₂: significant dependence of sodium fraction, morphology, and phases of the film on deposition position in the plume