Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes

Lin, Guan-Bo; Kim, Dong-Yeong; Shan, Qifeng; Cho, Jaehee; Schubert, E. Fred; Shim, H.W.; Sone, Cheolsoo; Kim, Jong Kyu

doi:10.1109/jphot.2013.2276758

Cited by 36 publications

(14 citation statements)

References 21 publications

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“…As the result, the electric field in the QW is increased, and the electric field in the barrier is decreased. 37,38 Therefore, thicker barrier of the c-plane and ð10 13Þ SQW produces more titling in QW and less tilting in the barrier. It is also shown that the tilting is stronger in the c-plane SQW than in the semipolar ð10 13Þ SQW because of stronger polarization.…”

Section: Barrier Thicknessmentioning

confidence: 99%

Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Huang

et al. 2016

Journal of Applied Physics

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The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The intersubband transition frequency, dipole matrix elements, and absorption spectra are calculated for SQW on different semipolar planes. It is found that SQW on a certain group of semipolar planes (55° < θ < 90° tilted from c-plane) exhibits low transition frequency and long wavelength response with high absorption quantum efficiency, which is attributed to the weak polarization-related effects. Furthermore, these semipolar SQWs show tunable transition frequency and absorption wavelength with different quantum well thicknesses, and stable device performance can be achieved with changing barrier thickness and Al compositions. All the results indicate that the semipolar AlGaN/GaN quantum wells are promising candidate for the design and fabrication of high performance low frequency and long wavelength optoelectronic devices.

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Section: Barrier Thicknessmentioning

confidence: 99%

Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Huang

et al. 2016

Journal of Applied Physics

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“…7,8 Therefore, the total thickness of GaInN/GaN MQWs cannot be increased, and the maximum thickness is dozens of nanometers. 9,10 It is well-known that the piezoelectric field is intrinsically absent on nonpolar m-plane substrates. 6 If the m-plane can be adopted in the GaInN/GaN active layer, internal quantum efficiency drop can be effectively suppressed.…”

Section: Introductionmentioning

confidence: 99%

“…Light-emitting diodes (LEDs) and laser diodes are widely used in our daily life, including in illumination, backlights of smartphones, and large displays. Among III–V group semiconductor materials, GaN-based LEDs have contributed significantly to energy saving in recent years because of their long life and high luminous efficiency. − Specifically, GaN/GaInN multiple quantum well (MQW) LEDs grown on polar c -plane structures have been widely developed and commercialized. , However, an internal electric field (piezoelectric field) commonly exists in the MQW active layer grown on c -plane substrates because of piezoelectric polarization. , The quantum confinement Stark effect (QCSE), because of the piezoelectric field, decreases the radiative recombination probability and the internal quantum efficiency. , Therefore, the total thickness of GaInN/GaN MQWs cannot be increased, and the maximum thickness is dozens of nanometers. , It is well-known that the piezoelectric field is intrinsically absent on nonpolar m -plane substrates . If the m- plane can be adopted in the GaInN/GaN active layer, internal quantum efficiency drop can be effectively suppressed. , Additionally, the thickness of the QW can be increased without clear degradation of crystalline quality .…”

Section: Introductionmentioning

confidence: 99%

Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction

Miyamoto

Sone

et al. 2021

ACS Appl. Mater. Interfaces

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Here, we systematically investigated the growth conditions of an n-GaN cap layer for nanowire-based light emitters with a tunnel junction. Selective-area growth of multiple quantum shell (MQS)/nanowire core−shell structures on a patterned n-GaN/sapphire substrate was performed by metal− organic vapor phase epitaxy, followed by the growth of a p-GaN, an n ++ / p ++ -GaN tunnel junction, and an n-GaN cap layer. Specifically, two-step growth of the n-GaN cap layer was carried out under various growth conditions to determine the optimal conditions for a flat n-GaN cap layer. Scanning transmission electron microscopy characterization revealed that n ++ -GaN can be uniformly grown on the m-plane sidewall of MQS nanowires. A clear tunnel junction, involving 10-nm-thick p ++ -GaN and 3-nm-thick n ++ -GaN, was confirmed on the nonpolar m-planes of the nanowires. The Mg doping concentration and distribution profile of the p ++ -GaN shell were inspected using three-dimensional atom probe tomography. Afterward, the reconstructed isoconcentration mapping was applied to identify Mg-rich clusters. The density and average size of the Mg clusters were estimated to be approximately 4.3 × 10 17 cm −3 and 5 nm, respectively. Excluding the Mg atoms contained in the clusters, the remaining Mg doping concentration in the p ++ -GaN region was calculated to be 1.1 × 10 20 cm −3 . Despite the lack of effective activation, a reasonably low operating voltage and distinct light emissions were preliminarily observed in MQS nanowire-based LEDs under the optimal n-GaN cap growth conditions. In the fabricated MQS-nanowire devices, carriers were injected into both the r-plane and m-plane of the nanowires without a clear quantum confinement Stark effect.

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“…The favorable periods and thickness of InGaN/GaN QWs for high brightness and high EQE under high injection current (above several tens of mA) of blue LEDs are reported [16–18]. In the reports, nine periods of InGaN/GaN QWs grown on patterned sapphire substrates (PSSs) show a significant improvement of light emission power and droop properties of EQE [16].…”

Section: Introductionmentioning

confidence: 99%

“…The best optical and electrical performances of blue LEDs are demonstrated if the active region consists of 12 periods of InGaN/GaN QWs at the injection current 42 A/cm 2 [17]. Apparent reduction of EQE droop and enhancement of IQE are demonstrated for the thickness of QB reduced from 24.5 to 9.1 nm in the simulation results of InGaN/GaN LEDs [18]. Si doping in proper thickness and numbers of QBs in InGaN/GaN QWs is crucial for further promotion of brightness and efficiency of InGaN blue LEDs operating at high injection current.…”

Section: Introductionmentioning

confidence: 99%

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

et al. 2017

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The features of eight-period In0.2Ga0.8N/GaN quantum wells (QWs) with silicon (Si) doping in the first two to five quantum barriers (QBs) in the growth sequence of blue light-emitting diodes (LEDs) are explored. Epilayers of QWs’ structures are grown on 20 pairs of In0.02Ga0.98N/GaN superlattice acting as strain relief layers (SRLs) on patterned sapphire substrates (PSSs) by a low-pressure metal-organic chemical vapor deposition (LP-MOCVD) system. Temperature-dependent photoluminescence (PL) spectra, current versus voltage (I-V) curves, light output power versus injection current (L-I) curves, and images of high-resolution transmission electron microscopy (HRTEM) of epilayers are measured. The consequences show that QWs with four Si-doped QBs have larger carrier localization energy (41 meV), lower turn-on (3.27 V) and breakdown (− 6.77 V) voltages, and higher output power of light of blue LEDs at higher injection current than other samples. Low barrier height of QBs in a four-Si-doped QB sample results in soft confinement potential of QWs and lower turn-on and breakdown voltages of the diode. HRTEM images give the evidence that this sample has relatively diffusive interfaces of QWs. Uniform spread of carriers among eight QWs and superior localization of carriers in each well are responsible for the enhancement of light output power, in particular, for high injection current in the four-Si-doped QB sample. The results demonstrate that four QBs of eight In0.2Ga0.8N/GaN QWs with Si doping not only reduce the quantum-confined Stark effect (QCSE) but also improve the distribution and localization of carriers in QWs for better optical performance of blue LEDs.

show abstract

Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes

Cited by 36 publications

References 21 publications

Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

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