2022
DOI: 10.1007/s00339-022-05376-5
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Effect of rapid thermal annealing time on ZnO:F thin films deposited by radio frequency magnetron sputtering for solar cell applications

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Cited by 7 publications
(6 citation statements)
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“…A record efficiency of 23.35% in CIGSSe thin film solar cells was achieved with a sputtered absorber layer [40]. Sputtering is also commonly used for TCO, buffer layers and ETL/HTL with materials such as ITO [41], FZO [42], MoO x [43], AZO [44], TiO x [45], and other metal oxides as interlayers, passivating thin film solar cells [46][47][48]. A commercialized all-sputtering system was developed by Midsummer for CIGS production with process sequence completed in different sputtering chambers for diffusion barrier, absorber, buffer, window and TCO layer deposition [49].…”
Section: Sputteringmentioning
confidence: 99%
“…A record efficiency of 23.35% in CIGSSe thin film solar cells was achieved with a sputtered absorber layer [40]. Sputtering is also commonly used for TCO, buffer layers and ETL/HTL with materials such as ITO [41], FZO [42], MoO x [43], AZO [44], TiO x [45], and other metal oxides as interlayers, passivating thin film solar cells [46][47][48]. A commercialized all-sputtering system was developed by Midsummer for CIGS production with process sequence completed in different sputtering chambers for diffusion barrier, absorber, buffer, window and TCO layer deposition [49].…”
Section: Sputteringmentioning
confidence: 99%
“…According to the abovementioned and illustrated results, the use of pure ZnO as pure or modified with 1–10% K 2 O calcined at 400°C for 3 h in oxygen, the following remarks can be summarized as follows: Because of its high activity, ZnO is a multitalented, flattering oxide in many processes 1–24 . ZnO as pure and modified catalysts were easily prepared herein and characterized by their nanoscale crystallite size in, that is, 22.9–28.0 nm, high basicity (ca.…”
Section: Conclusive Remarksmentioning
confidence: 99%
“…Because of its high activity, ZnO is a multitalented, flattering oxide in many processes 1–24 . ZnO as pure and modified catalysts were easily prepared herein and characterized by their nanoscale crystallite size in, that is, 22.9–28.0 nm, high basicity (ca.…”
Section: Conclusive Remarksmentioning
confidence: 99%
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“…However, an additional advantage is the possibility of the preparation of p-type transparent conductive coatings using in situ doping of ZnO during its deposition [ 6 ]. The form type and dimensions of ZnO nanostructures have a strong impact on its features as well [ 7 , 8 , 9 ]. All of the listed properties and additionally the high thermal and mechanical stability at room temperature make it attractive for potential use in electronics, optoelectronics and laser technology [ 10 ].…”
Section: Introductionmentioning
confidence: 99%