Effect of rapid thermal annealing on Zn_1‐xCd_xO layers grown by radio‐frequency magnetron co‐sputtering

Abstract

Zn 1-x Cd x O layers were deposited on the sapphire substrate using the radio-frequency magnetron co-sputtering system. The grown Zn 1-x Cd x O layers were carried out in the post-annealing treatment for 1 min at the 800 o C oxygen-ambient by the rapid thermal annealing (RTA) method. X-ray diffraction (XRD) experiment shows that the Zn 1-x Cd x O layers are changed from the single phase of the hexagonal structure at 0≤x≤0.08 to the double phase of hexagonal-and-cubic structure at x=0.13. Thus, the maximum Cd-composition ratio with the hexagonal structure was found out to be x=0.08. Also, the crystallinity of Zn 1-x Cd x O layers at x=0.13 was remarkably improved by the RTA annealing treatment. This crystal quality improvement was thought to be associated with the relaxation of the compressive strain remaining in the Zn 1-x Cd x O layers. Therefore, the results of XRD and transmittance lead that the crystal quality of the Zn 1-x Cd x O layers forming the hexagonal ZnO phase is better than that forming the cubic CdO phase. Consequently, the reliable formation and the crystallinity of the Zn 1-x Cd x O layers were achieved by using the RTA method of short-time thermal-annealing at the high temperature.

Annealing Induced Saturation in Electron Concentration for V-Doped CdO

“…This may lead to different electrical properties. Among various technologies for CdO film preparation, the radio frequency (RF) magnetron sputtering method is widely adapted in industry and considered as a low cost, scalable method [3,9]. The electrical properties of CdO film have been found to be strongly dependent on the RF power, deposition time and deposition atmosphere [10][11][12].…”

“…However, the as-deposited CdO film usually contain many lattice defects, surface defects and internal stress, which will keep the film at an unstable status [9,13]. Thus, improving the stability of CdO film through post-heat treatment is worth investigating.…”