Effect of rapid thermal annealing on barrier height and 1/<i>f</i> noise of Ni/GaN Schottky barrier diodes

Kumar, Ashutosh; Latzel, Michael; Christiansen, Silke; Kumar, Vikram; Singh, Rajendra

doi:10.1063/1.4929829

Cited by 31 publications

(34 citation statements)

References 42 publications

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“…Figure a shows the J–V characteristics of graphene/hBN/n‐GaN device with respect to temperature (298–373 K). Increase in forward current and reduction in turn‐on voltage were observed with the increase in temperature . Figure b shows the semi‐logarithmic plot for forward and reverse bias J – V characteristics.…”

Section: Resultsmentioning

confidence: 97%

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

Kalita

Kobayashi

Shaarin

et al. 2018

Phys. Status Solidi A

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Metal‐insulator‐semiconductor (MIS) based Schottky barrier diode (SBD) has significant importance for optoelectronics and other device applications. Here, we demonstrate the fabrication of a highly rectifying Schottky barrier diode (SBD) using a thin hexagonal boron nitride (hBN) interfacial layer in graphene and n‐type gallium nitride (n‐GaN) heterojunction. Significant reduction of reverse saturation current is obtained with the introduction of hBN layer in graphene/n‐GaN interface. The MIS based SBD shows excellent ultraviolet (UV) photoresponsivity with a light/dark ratio of ≈105 at a low reverse bias voltage (−1.5V). Temperature dependent current density‐voltage (J–V) characteristics of the graphene/hBN/n‐GaN heterojunction is investigated to elucidate the current transport behavior. The Schottky barrier height increased with increase in temperature from 0.77 to 0.98 eV in the temperature range of 298–373 K, respectively. The series resistance (RS) is also found to be temperature dependent, where RS decreased with increase in temperature. The understanding of graphene/hBN/n‐GaN heterojunction device characteristics can be significant for photodiode and switching device applications.

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Section: Resultsmentioning

confidence: 97%

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

Kalita

Kobayashi

Shaarin

et al. 2018

Phys. Status Solidi A

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“…These results are similar to those obtained for the GaN‐based Schottky contact. Kumar et al reported that the ideality factor is decreased from 1.10 at 80 K to 3.5 at 320 K , and the barrier height is increased from 0.3 eV at 80 K to 1.2 eV at 320 K for Ni/GaN Schottky structures.…”

Section: Resultsmentioning

confidence: 99%

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Helal¹,

Benamara²,

Arbia

et al. 2020

Int J Numerical Modelling

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In this paper, a study of the effect of thin GaN interfacial layer (1 nm) on the electrical behavior of Au/n‐GaAs structure is investigated in wide temperature range 100 to 400 K, using Silvaco‐Atlas simulator. As a result, from I‐V characteristics, the series resistance R s is increased with decreasing temperature for Au/GaN/n‐GaAs structure, while it is remained almost constant for Au/n‐GaAs structure. The saturation current I s is decreased with decreasing temperature for both structures. The ideality factor n is increased, and the barrier height ɸbn is decreased when temperature decreases, with important variation for Au/GaN/n‐GaAs structure. This abnormal behavior is due to the deviation of the dominant conduction mechanisms, from the thermionic emission TE current to the thermionic field emission TFE and the field emission FE. As well as, the Au/n‐GaAs structure shows a homogeneous of barrier height, while it is inhomogeneous for Au/GaN/n‐GaAs structure. In addition, from C‐V characteristics, the potential diffusion V d and the barrier height ɸbn are increased with decreasing temperature for both structures, conversely to those obtained from the TE theory. These results confirm the deviation of the TE current to the TFE and FE currents with decreasing temperature for the Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes.

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“…More detailed explanation is give elsewhere. 27,28 From the I-V-T measurement results, it is believed that the effect of ideality factor greater than 1 for all temperatures can be modeled by considering current transport in the device to be explained by thermionic field-emission. The forward bias current transport mechanism is mostly determined by the value of the ideality factor.…”

Section: Resultsmentioning

confidence: 99%

Investigation of significantly high barrier height in Cu/GaN Schottky diode

et al. 2016

Self Cite

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Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O) layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

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Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes

Cited by 31 publications

References 42 publications

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Investigation of significantly high barrier height in Cu/GaN Schottky diode

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