2020
DOI: 10.1002/jnm.2714
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A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Abstract: In this paper, a study of the effect of thin GaN interfacial layer (1 nm) on the electrical behavior of Au/n‐GaAs structure is investigated in wide temperature range 100 to 400 K, using Silvaco‐Atlas simulator. As a result, from I‐V characteristics, the series resistance R s is increased with decreasing temperature for Au/GaN/n‐GaAs structure, while it is remained almost constant for Au/n‐GaAs structure. The saturation current I s is decreased with decreasing temperature for both structures. The ideality facto… Show more

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Cited by 11 publications
(18 citation statements)
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“…Figure 5 shows the variation of (E0 =nkT/q) versus kT/q. From figure 5, 0 is approximately 2 to 10 times higher than kT/q, in the temperature range of 80 K-300 K. This indicates that the dominant current is the FE mechanism at low temperatures [5]. In the temperature range 300 K-420 K, E0 remains almost equal to kT/q.…”
Section: Results Partmentioning
confidence: 85%
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“…Figure 5 shows the variation of (E0 =nkT/q) versus kT/q. From figure 5, 0 is approximately 2 to 10 times higher than kT/q, in the temperature range of 80 K-300 K. This indicates that the dominant current is the FE mechanism at low temperatures [5]. In the temperature range 300 K-420 K, E0 remains almost equal to kT/q.…”
Section: Results Partmentioning
confidence: 85%
“…The abnormal behavior of ɸ and the high values of n in low temperature can be explained by the effect of the tunnel mechanisms, such as thermionic field emission (TFE) current and emission field (FE) current [5,11].…”
Section: Results Partmentioning
confidence: 99%
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