We report on the electrical behavior of Metal/n‐GaAs Schottky structure, using Silvaco‐Atlas software. To study the effect of metal work function ϕm on the performance of various parameters such as saturation current Is, ideality factor n, and barrier height ϕb, we examine a large number of contact materials having different ϕm at room temperature (300 K). The results show a significant dependence between ϕm and the electrical parameters. It is observed that the smaller values of the threshold voltage Vi are obtained for low ϕm. We also find that metals within ϕm ∈ [4.42–5.31] eV give lower n. A linear increase of the barrier height ϕb is mentioned for ϕm ∈ [4.33–5.37] which is in accordance with the theoretical relationship. In addition, the selection of four different metal contact (Cu, Au, Pt, and Ni) is devoted to simulate the Metal/n‐GaAs Schottky structure in a wide temperature range of (100–400 K). This allows us to extract and discuss the influence of temperature on the performance of our proposed device.