Effect of rapid thermal annealing on the optical properties of GaAsSb alloys

Gao, Xian; Wei, Zhipeng; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Chu, Xueying; Li, Jinhua; Ma, Xiang; Wang, Xiaohua; Chen, Rui

doi:10.1364/ome.7.001971

Cited by 12 publications

(7 citation statements)

References 40 publications

(59 reference statements)

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“…Figure 1(d) displays the PL spectra of the as-grown and RTA treated GaAsSb samples measured at 180 K. At this particular temperature, the peak position of the sample has redshifted to 49 meV after the RTA treatment. According to reference [27], the valence band can be modulated by incorporating Sb into GaAs, leading to a significant reduction in band gap [24]. It is noted that the PL emission of the asgrown GaAsSb sample almost disappears above 180 K. In contrast, the emission intensity of the RTA treated sample is much stronger.…”

Section: Resultsmentioning

confidence: 99%

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Optical characteristics of GaAsSb alloy after rapid thermal annealing

Gao

Zhao

Fang

et al. 2017

Semicond. Sci. Technol.

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GaAsSb ternary alloy is a promising material for application in infrared optoelectronic devices. In this letter, the investigation of carrier recombination in the as-grown and rapid thermal annealing (RTA) treated GaAsSb samples has been carried out. It was found that after thermal treatment the emission of the GaAsSb material was enhanced and could be maintained up to room temperature. These phenomena can be ascribed to the decrease of non-radiative combination defects in the GaAsSb sample, which implies an improved crystal quality. Moreover, the localized exciton-longitudinal optical phonon interaction is slightly increased after RTA treatment. It is suggested that the interaction depends strongly on the localized states, and the photoluminescence emission intensity can be significantly increased after suitable RTA treatment. Promoting better optical emission in GaAsSb is very useful for its practical application.

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Section: Resultsmentioning

confidence: 99%

“…In our previous study [20], it was found that the localized degree displays a linear relationship with the Sb content. To eliminate the localized states, a rapid thermal annealing (RTA) process was used in later research [24]. It was found that a suitable annealing process could suppress defects or reduce localized states in GaAsSb alloys.…”

Section: Introductionmentioning

confidence: 99%

Optical characteristics of GaAsSb alloy after rapid thermal annealing

Gao

Zhao

Fang

et al. 2017

Semicond. Sci. Technol.

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“…Unfortunately, there have only been a few reports on the optical properties of GaAsSb materials [43][44][45][46][47][48][49][50]. In addition, GaAsSb has been recognized as an important material for use in high-performance optoelectronic devices, and its optical properties are thus significant for the improvement of the performance of these devices.…”

Section: Gasb Alloy Emission Propertiesmentioning

confidence: 99%

“…It should be noted that the formation of localized states was related to Sb cluster formation inside the GaAs x Sb 1−x alloy, which was influenced by the rapid thermal annealing (RTA) temperature. Figure 9 shows the effects of the RTA temperature on the emission properties [50]. During the RTA process, a significant change in the PL, owing to the reduction of localized states, was observed.…”

Section: Gasb Alloy Emission Propertiesmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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“…[15][16][17] It is also beneficial to the improvement of performance of optoelectronic devices. In our previous research, localized states characteristics in GaAsSb/AlGaAs multiple QWs (MQWs) [18] and GaAsSb epitaxial layers [19,20] were reported. After rapid thermal annealing (RTA) treatment, the localized states in the GaAsSb alloy reduced effectively that indicates suppression of defects or localized states.…”

Section: Introductionmentioning

confidence: 99%

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

Jia

Wang

Azad

et al. 2021

Physica Rapid Research Ltrs

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An effect of rapid thermal annealing (RTA) on emission properties of InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) grown by molecular‐beam epitaxy is systematically investigated by photoluminescence (PL) spectra. The emission from free‐exciton and localized carriers is confirmed in as‐grown InGaAsSb/AlGaAsSb MQWs using temperature and excitation power‐dependent PL spectra. The results of RTA for different times at a fixed temperature of 350 °C are analyzed. The PL intensity of InGaAsSb/AlGaAsSb MQWs is increased after an RTA process, and the peak position is slightly blueshifted at 300 K. Low‐temperature PL spectra show improved emission of free‐exciton and deteriorated localized carriers recombination at an annealing time of 60 s. Double crystal X‐ray diffraction (DCXRD) measurements are also carried out to study the crystalline quality before and after annealing. These results indicate that a suitable RTA treatment is effective in reducing the densities of nonradiative recombination centers, which implies an improved optical property and crystalline quality of quantum well structures. This study provides valuable understanding of recombination processes and improvement of optical properties by RTA treatment in InGaAsSb/AlGaAsSb MQWs.

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Effect of rapid thermal annealing on the optical properties of GaAsSb alloys

Cited by 12 publications

References 40 publications

Optical characteristics of GaAsSb alloy after rapid thermal annealing

Optical characteristics of GaAsSb alloy after rapid thermal annealing

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

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