Optical characteristics of GaAsSb alloy after rapid thermal annealing

Abstract

GaAsSb ternary alloy is a promising material for application in infrared optoelectronic devices. In this letter, the investigation of carrier recombination in the as-grown and rapid thermal annealing (RTA) treated GaAsSb samples has been carried out. It was found that after thermal treatment the emission of the GaAsSb material was enhanced and could be maintained up to room temperature. These phenomena can be ascribed to the decrease of non-radiative combination defects in the GaAsSb sample, which implies an improved crystal quality. Moreover, the localized exciton-longitudinal optical phonon interaction is slightly increased after RTA treatment. It is suggested that the interaction depends strongly on the localized states, and the photoluminescence emission intensity can be significantly increased after suitable RTA treatment. Promoting better optical emission in GaAsSb is very useful for its practical application.

Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

“…[15][16][17] It is also beneficial to the improvement of performance of optoelectronic devices. In our previous research, localized states characteristics in GaAsSb/AlGaAs multiple QWs (MQWs) [18] and GaAsSb epitaxial layers [19,20] were reported. After rapid thermal annealing (RTA) treatment, the localized states in the GaAsSb alloy reduced effectively that indicates suppression of defects or localized states.…”