Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

Zhao, Yue; Li, Dongsheng; Xing, Shuoxiang; Sang, Wenbin; Yang, Deren; Jiang, Minhua

doi:10.1016/j.jlumin.2007.04.015

Cited by 1 publication

(1 citation statement)

References 25 publications

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“…이러한 문제점을 극복하기 위해 다양한 방법들을 이용하여 다공질 실 리콘의 표면처리에 대한 연구가 진행되고 있다. 표면 처리 방법으로는 비정질 실리콘 증착 [9], 탄소 박막 증착 [10], 그리고 표면 열처리 [11,12] 다공질 실리콘을 급속 열처리함으로써 다공질에 열적 스트레스가 작용하여 PL 세기가 감소하는 것이다 [10]. 또 다른 요인으로는 그림 2에서 설명한 다공질 실리콘의 표면 조성 물질 변화이다.…”

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Effects of Annealing Temperature and Atmosphere on Properties of Porous Silicon

Choi¹,

Yim²,

Jeon³

et al. 2010

Journal of the Korean Institute of Electrical and Electronic Ma

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The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to 800℃. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of SiN bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.

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