Effect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations

Abstract

Articles you may be interested inTemperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films Appl. Phys. Lett.

Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

“…Surprisingly, the ESD of the Hf 0.3 Zr 0.7 O 2 capacitor did not decrease with the increase in the temperature even up to 175 °C as seen in Figure 3 b, whereas the ESD of the Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 and PbZrO 3 capacitors decreased by ≈20% and 40% when the temperature increased from room temperature to 150 °C. [ 10,11 ] The energy effi ciency also did not decrease with an increase in the temperature. Such excellent thermal stability of the Hf 0.3 Zr 0.7 O 2 capacitor demonstrated its usefulness as a highly effi cient energy storage capacitor.…”

“…[ 15 ] This means that the larger electric fi eld was needed for the stabilization of the FE phase at a higher temperature, which is opposite to the trend reported for Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 and PbZrO 3 capacitors. [ 10,11 ] Moreover, the decrease of polarization with increasing temperature at constant electric fi eld is believed to be strongly related with the electrocaloric effect. [ 20 ] The electrocaloric effect could be ascribed to the fact that the internal temperature or entropy ( S ) of the polar material can be controlled by applying electric fi eld according to the Maxwell's relation in thermodynamics, (∂ S /∂ E ) T = (∂ P /∂ T ) E .…”

“…Another signifi cant problem with PZT thin fi lms is the decrease in their ESD value by ≈20-40% when their operating temperature increases to 150 °C. [ 10,11 ] Other candidate materials are FE poly(vinylidenefl uoride) (PVDF)-based materials, which can have a large breakdown fi eld and maximum polarization. The highest ESD value of FE PVDF-based fi lms has been reported to be as high as ≈20 J cm −3 when a ≈8 MV cm −1 electric fi eld was applied.…”

Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

“…15 Recent theory calculations have suggested that AFE phase stability with strain is also related to the growth orientation of AFE films 16 and has been proven by experimental results from highly oriented polycrystalline PbZrO 3 films. 17 Previous studies, however, have focused on how AFE-FE phase transition and related polarization switching are affected by strain. Very little effort has been directed toward deliberate controlling the strain states and the polarization switching properties.…”

“…22,23 Figure 4(b) shows a typical example to compare (110)/(101)-oriented PbZrO 3 film (PZ(110)/Si) with (001)-oriented PbZrO 3 film on Si (PZ(001)/Si). 17 The shaded areas represent the recoverable energy density during the FE-AFE switching. The inset plots the curve of energy density of two films with electric field indicating two films have similar value of energy density.…”