Effect of residual stress on RF MEMS switch

Dutta, Shankar; Imran, Mohd; Pal, R.; Jain, Kapil; Chatterjee, R.

doi:10.1007/s00542-011-1360-5

Cited by 36 publications

(9 citation statements)

References 12 publications

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“…It affects the flatness of the fabricated switch, thus affecting the static and dynamic characteristics of the switch. For example, the compressive stress increases the pull-in voltage and reduces the switching time [ 65 ]. Temperature is the most common failure acceleration factor.…”

Section: Performance Indicators Of Mems Switchesmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

Micromachines

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MEMS switch is a movable device manufactured by means of semiconductor technology, possessing many incomparable advantages such as a small volume, low power consumption, high integration, etc. This paper reviews recent research of MEMS switches, pointing out the important performance indexes and systematically summarizing the classification according to driving principles. Then, a comparative study of current MEMS switches stressing their strengths and drawbacks is presented, based on performance requirements such as driven voltage, power consumption, and reliability. The efforts of teams to optimize MEMS switches are introduced and the applications of switches with different driving principles are also briefly reviewed. Furthermore, the development trend of MEMS switch and the research gaps are discussed. Finally, a summary and forecast about MEMS switches is given with the aim of providing a reference for future research in this domain.

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Section: Performance Indicators Of Mems Switchesmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

Micromachines

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“…Although a high natural frequency may also lead to an increased switch-on time, the shape mode of the beam is not useful for RF MEMS switches. The relation between the switching time and the natural frequency of MEMS switch is given as bellow [24].…”

Section: Mechanical Parametersmentioning

confidence: 99%

Design and Simulation of a Low-Actuation-Voltage MEMS Switch

Mafinejad¹,

Kouzani²,

Matekovits³

2015

Proceedings of the 10th EAI International Conference on Body Area Networks

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This paper presents a low-actuation-voltage micro-electromechanical system (MEMS) capacitive shunt switch which has a very large bandwidth (4 GHz to 24 GHz). In this work, the isolation of MEMS switch is improved by adding two short high impedance transmission lines at the beginning and end of a coplanar waveguide (CPW). Simulating the switch demonstrates that a return loss (S11) is less than-26 dB for the entire frequency band, and perfect matching at 20 GHz in upstate position. A ramp dual pulse driver is also designed for reducing the capacitive charge injection for considering the reliability of the switch. The simulation results show that the shifting of voltage due to the capacitive charge is reduced by more than 35% of the initial value. Finally, the dynamic behavior of the MEMS switch is simulated by modal analysis and using CoventorWare to calculate the natural frequencies of the switch and its mode shapes. The switching ON and OFF time are 4.48 and 2.43 µs, respectively, with an actuation voltage of less than 15 V.

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“…Residual stress is one of the most common after-effects of the thin film deposition process and so associated with MEMS structures [12][13][14]. Residual stresses can be described in terms of length over which the stresses equilibrate [15][16][17].…”

Section: Introductionmentioning

confidence: 99%