Effect of RF Power on an Al-doped ZnO Thin Film Deposited by RF Magnetron Sputtering

Effect of rf power on the properties of rf magnetron sputtered ZnO:Al thin films

“…3 shows a quasi linear dependence of log R on rf power. The increase of resistance R with increasing rf power P has been also reported by [20], while in another work R has been found to decrease with increasing P [21]; still, other groups found a non monotonic dependence of R on P [5,16,22,23]. Song et al [5] concluded from the contradicting trends found in the literature that machine related issues can affect the morphological structure and microscopic imperfection of the films which are closely related to their resistivity.…”

“…Song et al [5] concluded from the contradicting trends found in the literature that machine related issues can affect the morphological structure and microscopic imperfection of the films which are closely related to their resistivity. The increase in resistivity with increasing rf power was related to high energy bombardment effects [16,20,22] or enhancement of stoichiometry [23], whereas the decrease in resistivity with increasing rf power was related to an enhancement in film crystallinity [16,21,22] or to a deviation from stoichiometry [23].…”

“…This finding can be explained in terms of the number of either Ovacancies or Al interstitials in the films. According to Lee et al [15] the increase of d is related to a decrease in the number of Ovacancies; however, other groups [14,16] d and rf power in terms of the number of O-vacancies. Furthermore, the fact mentioned above that all obtained d values in our films lie well above that of bulk ZnO (d ZnO ) is an additional factor that does not support a strong presence of O-vacancies in the films.…”

Effect of the RF sputtering power on microstructural, optical and electrical properties of Al doped ZnO thin films

“…However, considering the complexity of studying the defect chemistry of AZO thin films, carrier concentration and mobility has been rarely correlated to lattice stoichiometry variation. Recently interesting contributions have been reported [14][15][16]. The aim of this study consists both in investigating the effect of the RF power discharge on structural, optical and electrical properties and in understanding the relationships existing between these properties and lattice stoichiometry variation.…”

Structural and opto-electrical properties of Al doped ZnO sputtered thin films

“…The mostly used ZnO:Al thin film has been prepared with various methods: radio frequency (RF) sputtering [7], pulsed laser deposition [8], atomic layer deposition and chemical vapor deposition [9]. Many authors have studied the RF sputtering of ZnO:Al target [10][11][12][13]. Unfortunately, only few studies reported on doping by simultaneous magnetron co-sputtering techniques [14], the most important advantage of this method is the control of the charges carrier concentrations.…”