Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration

Challali, Fatiha; Mendil, Djelloul; Touam, Tahar; Chauveau, Thierry; Bockelée, Valérie; Sanchez, Alexis Garcia; Chelouche, A.; Besland, Marie-Paule

doi:10.1016/j.mssp.2020.105217

Cited by 53 publications

(17 citation statements)

References 23 publications

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“…As the grain boundary scattering decreases there is an increase in the electron mobility, thus increasing the conductivity of the AZO thin films. [ 26,33,34 ] The electrical resistivity ( ρ ) was calculated by the following formula [ 7 ]

ρ = \frac{π t}{\ln 2} normalR

where, t is the thickness (440, 870, 913, and 1086 nm for the sample 130, 140, 150, and 160 W, respectively) of the thin film, (π/ln 2) × R is the factor of sheet resistance ( R sh ) and R = V / I , V is the voltage and I is the current corresponding to applied voltage. The electrical resistivity of the thin films were obtained 5.83 × 10 −3 Ωm, 5.09 × 10 −3 Ωm, 4.46 × 10 −3 Ωm, and 4.10 × 10 −3 Ωm for the sample 130, 140, 150, and 160 W, respectively.…”

Section: Resultsmentioning

confidence: 99%

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Rana

Rajput

Pathak

et al. 2021

Crystal Research and Technology

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In the present work, fixed Al (2.5 wt%) doped zinc oxide (ZnO) thin films are fabricated at different radio frequency (RF) power on indium doped tin oxide‐coated polyethylene terephthalate substrate by sputtering techniques. From the X‐ray diffraction (XRD) results it has been observed that all thin films have polycrystalline nature with hexagonal structure. Stress of thin film calculated from XRD measurement is increased from −0.10 × 109 to 0.23 × 109 N m−2 with increase in RF sputtering power. The morphology analyzed by field electron microscopy is observed as irregular sphere for all samples. The estimated values of thickness are 440, 870, 913, and 1086 nm for the films grown at RF sputtering powers 130, 140, 150, and 160 W, respectively. On increasing the RF power from 130 to 160 W, the optical bandgap is decreased from 3.59 to 3.48 eV. The highest conductivity obtained is 2.43 × 102 S m−1 for the sample grown at sputtering power 160 W. The study reveals that there is an impact of sputtering power on the various properties of thin films grown on flexible substrates and these films have wide applications in flexible electro‐optical applications.

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ρ = \frac{π t}{\ln 2} normalR

Section: Resultsmentioning

confidence: 99%

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Rana

Rajput

Pathak

et al. 2021

Crystal Research and Technology

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“…0.16 depending on X . Typically, AZO thin films consist of less than 10% aluminium [ 26 – 29 ] taking into account Al, Zn, and O. In this work, the material composition was measured using EDS, in which the measurement of X-ray intensities of light elements, such as oxygen, can be difficult and often subject to systematic errors.…”

Section: Discussionmentioning

confidence: 99%

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

Posadowski¹,

Wiatrowski²,

Domaradzki³

et al. 2022

Beilstein J. Nanotechnol.

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AlxZnyO thin films were obtained by reactive pulsed magnetron sputtering. A two-element Zn/Al planar target was used as source material prepared in the form of a Zn disc (100 mm diameter) with Al rings pressed into its surface. The sputtering processes were carried out in a mixture of argon and oxygen. The films were deposited with a discharge power of PE = 400 W, which corresponded to a power density on the target surface of approximately 5 W/cm2. The films were deposited on glass strip substrates, placed symmetrically over the target, making it possible to obtain films with different composition and thickness. The film sheet resistance was measured as a function of the distance from the target axis on both sides (front and back) of the substrate. The lowest measured resistivity was about 4 × 10−3 Ω·cm. Additionally, optical properties, surface topography, and elemental composition were determined in selected areas of the substrate.

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“…Furthermore, a straightening of the columns occurred. This reorientation could be attributed to stress relaxation [39,40].…”

Section: Scanning Electron Microscopy and Elemental Content Analysismentioning

confidence: 95%

X-ray Micro-Computed Tomography: A Powerful Device to Analyze the 3D Microstructure of Anode-Electrolyte in BaZr0.8Y0.2O3 Protonic Ceramic Electrochemical Cells and the Reduction Behavior

Lescure

Gelin²,

François

et al. 2022

Membranes

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New advanced fuel cell technologies are moving towards high-temperature proton conductors (HTPCs) to meet environmental issues. Their elaboration remains a challenge and micro-computed tomography (µCT) is an innovative way to control their quality. NiO-BZY anodic supports of a protonic ceramic electrochemical cell (PCEC), elaborated by co-tape casting and co-sintered at 1350 °C, were coated with a BZY20 electrolyte layer by DC magnetron sputtering. The µCT allowed to observe defects inside the volume of these PCEC half-cells and to show their evolution after an annealing treatment at 1000 °C and reduction under hydrogen. This technique consists in obtaining a 3D reconstruction of all the cross-sectional images of the whole sample, slice by slice. This allows seeing inside the sample at any desired depth. The resolution of 0.35 µm is perfectly adapted to this type of problem considering the thickness of the different layers of the sample and the size of the defects. Defects were detected, and their interpretation was possible thanks to the 3D view, such as the phenomenon of NiO grain enlargement explaining defects in the electrolyte, the effect of NiO reduction, and finally, some anomalies due to the shaping process. Ways to anticipate these defects were then proposed.

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Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration

Cited by 53 publications

References 23 publications

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

X-ray Micro-Computed Tomography: A Powerful Device to Analyze the 3D Microstructure of Anode-Electrolyte in BaZr0.8Y0.2O3 Protonic Ceramic Electrochemical Cells and the Reduction Behavior

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Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration

Cited by 53 publications

References 23 publications

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Impact of RF Sputtering Power on AZO Thin Films for Flexible Electro‐Optical Applications

Selected properties of AlxZnyO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

X-ray Micro-Computed Tomography: A Powerful Device to Analyze the 3D Microstructure of Anode-Electrolyte in BaZr0.8Y0.2O3 Protonic Ceramic Electrochemical Cells and the Reduction Behavior

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Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target