Effect of sample size on the magnetic critical current density in nano-SiC doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MgB</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>superconductors

Soltanian, Saeid; Qin, M. J.; Keshavarzi, S.; Wang, Xiaotian; Dou, Shi Xue

doi:10.1103/physrevb.68.134509

Cited by 16 publications

(7 citation statements)

References 5 publications

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“…The temperature dependence of the resistivity for sample B is shown in figure 6. The value of T onset c = 38.24 K of our sample was determined from the ρ-T curves at 0 T; it is higher than that of the 10 at.% nano-SiC doped MgB 2 sample (T onset c = 37.05 K) reported in [21]. H irr and H c2 are obtained from the resistive transition curves shown in figure 7, where 10% and 90% transition points on the resistive transition can be taken to approximate H irr and H c2 for the field parallel to the boron and magnesium planes.…”

Section: Resultsmentioning

confidence: 54%

The upper critical field in micro-SiC doped MgB₂fabricated by a two-step reaction method

Yan

Guo

et al. 2007

Supercond. Sci. Technol.

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Low cost micro-SiC doped MgB 2 bulk samples were fabricated by a two-step reaction method. The phase compositions and microstructure of the micro-SiC doped MgB 2 bulk samples were analysed by using x-ray diffraction and a scanning electron microscope (SEM), respectively. The SEM results indicate that the porosity of the sample produced by the two-step reaction clearly decreases. H c2 for the micro-SiC doped MgB 2 reached 11 T at 20 K. And J c is 5.6 × 10 4 A cm −2 at 20 K and 1 T. These results indicate that the two-step reaction method can effectively improve the reactivity of micro-SiC, and significantly improve the upper critical field of MgB 2 .

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Section: Resultsmentioning

confidence: 54%

The upper critical field in micro-SiC doped MgB₂fabricated by a two-step reaction method

Yan

Guo

et al. 2007

Supercond. Sci. Technol.

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“…2(b) and b are the dimensions of the sample with w < b. 25,26 The obtained magnetic field dependence of the J c are presented in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Critical current density and flux pinning in Zr0.96V0.04B2 superconductor with AlB2 structure

Jung

Vanacken

Moshchalkov

et al. 2013

Journal of Applied Physics

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We have investigated the critical current density (Jc) and the flux pinning behavior in Zr0.96V0.04B2 superconductor with an AlB2 structure. V substitutions in Zr sites of non-superconducting ZrB2 system lead to superconductivity, and the 4% V-substituted Zr0.96V0.04B2 compounds show the highest superconducting transition temperature (Tc) of ∼8.7 K. The magnetic hysteresis (M−H) loops for the Zr0.96V0.04B2 demonstrate type-II superconducting behavior in a broad temperature range, and the Jc is estimated from the M−H loops using the Bean model. The analysis of the double-logarithmic Jc(H) plots indicates the dominance of collective pinning in Zr0.96V0.04B2, and that Jc(H) and magnetic field dependences of the flux pinning force density (Fp) are well fitted by the double exponential model which takes into account the existence of two superconducting gaps.

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“…The magnetization hysteresis half-loops M(H ) measured at 5 and 20 K with the maximum sweeping field of 2 T for a 300 nm thick film are shown in figure 3. The magnetic J c (H ) as a function of field H was determined using the Bean critical state model [26][27][28][29][30][31] expressed as…”

Section: Resultsmentioning

confidence: 99%

Thickness dependence of critical current density in MgB₂films fabricated byex situannealing of CVD-grown B films in Mg vapor

Hanna

Wang

Redwing

et al. 2008

Supercond. Sci. Technol.

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A study was performed to examine the Jc behavior as a function of thickness in MgB2 films fabricated by ex situ annealing at 840 °C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300 nm and 10 µm. The values of Jc range from 1.2 × 107 A cm−2 for 300 nm to 1.9 × 105 A cm−2 for 10 µm film thicknesses at 20 K and self-field. The study shows that the critical current density (Jc) in MgB2 films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (Ic) reaches its maximum value of 728 A cm−1 width at ∼1 µm thick MgB2 films at 20 K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which Ic reaches its maximum value. The high Jc values carried by our films show that the ex situ fabrication method can produce high quality MgB2 films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

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Effect of sample size on the magnetic critical current density in nano-SiC dopedMgB2superconductors

Cited by 16 publications

References 5 publications

The upper critical field in micro-SiC doped MgB₂fabricated by a two-step reaction method

The upper critical field in micro-SiC doped MgB₂fabricated by a two-step reaction method

Critical current density and flux pinning in Zr0.96V0.04B2 superconductor with AlB2 structure

Thickness dependence of critical current density in MgB₂films fabricated byex situannealing of CVD-grown B films in Mg vapor

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Effect of sample size on the magnetic critical current density in nano-SiC dopedMgB2superconductors

Cited by 16 publications

References 5 publications

The upper critical field in micro-SiC doped MgB2fabricated by a two-step reaction method

The upper critical field in micro-SiC doped MgB2fabricated by a two-step reaction method

Critical current density and flux pinning in Zr0.96V0.04B2 superconductor with AlB2 structure

Thickness dependence of critical current density in MgB2films fabricated byex situannealing of CVD-grown B films in Mg vapor

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Product

Resources

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The upper critical field in micro-SiC doped MgB₂fabricated by a two-step reaction method

The upper critical field in micro-SiC doped MgB₂fabricated by a two-step reaction method

Thickness dependence of critical current density in MgB₂films fabricated byex situannealing of CVD-grown B films in Mg vapor