Effect of saturable index change on all-optical logic operations in a passive vertical cavity semiconductor saturable absorber

Datta, Prasanta Kumar; Pradhan, R.; Mishra, Lokanath; Saha, Swatilekha

doi:10.1049/iet-opt.2010.0019

Cited by 8 publications

(4 citation statements)

References 19 publications

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“…The reflectivity of an asymmetric VCSSA for normal incidence of an input signal with wavelength of λ w is given by [14]:…”

Section: Device Analysismentioning

confidence: 99%

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber

Pradhan

2014

Appl. Opt.

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This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

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“…The reflectivity of an asymmetric VCSSA for normal incidence of an input signal with wavelength of λ w is given by [14]:…”

Section: Device Analysismentioning

confidence: 99%

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber

Pradhan

2014

Appl. Opt.

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“…The intensity reflectivity of an asymmetric Fabry-Pérot cavity embedded with semiconductor QWs material for an input signal at normal incidence is given by [18] …”

Section: Nonlinear Fabry-pérot Analysismentioning

confidence: 99%

All-Optical 2R Regeneration With Contrast Enhancement in a Reflective Vertical Cavity Quantum-Wells Saturable Absorber

Pradhan

Mishra

Hussain

et al. 2013

J. Opt. Commun. Netw.

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Round-trip nonlinear phase-shift of an input signal due to optically induced thermal effects and saturable index change in a low intensity resonant reflective vertical cavity semiconductor (quantum wells) saturable absorber (VCSSA) is investigated theoretically for 2R (reamplification and re-shaping) regeneration. Calculations are carried out for a high contrast switching system to find the optimum value of parameters such as energy time filling factor (FF) of the input pump signal, top mirror reflectivity (R t ) of the Fabry-Pérot cavity and wavelength detuning from the low intensity resonant wavelength of the Fabry-Pérot cavity. It is observed that the optimum contrasts are almost the same for a wavelength tuning range as large as 8 nm around the low intensity resonance wavelength of the InGaAs/InP quantum-wells-based VCSSA with R t of 0.72 and FF of 0.10. The simulation shows that the required average input power is minimal for high contrast 2R regeneration when operated in the short wavelength side.

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“…So the resultant wavelength shift may be blue or red shift depending on the relative contributions of nonlinear index change and thermal effects, which is ultimately quantitatively dependent on the cavity intensity and various properties of the absorber medium. At first, we design the top mirror reflectivity corresponding to the low cavity intensity impedance matching condition [24] …”

Section: Wavelength Shift Due To Influence Of Thermal Effectsmentioning

confidence: 99%

“…Next we consider the top mirror reflectivity corresponding to high cavity intensity impedance-matching condition [24] …”

Section: Wavelength Shift Due To Influence Of Thermal Effectsmentioning

confidence: 99%

Reflective vertical cavity semiconductor saturable absorber for functional operations with thermal limitations and saturable index change

Pradhan

Hussain

Datta

2011

Optics Communications

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Effect of saturable index change on all-optical logic operations in a passive vertical cavity semiconductor saturable absorber

Cited by 8 publications

References 19 publications

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber

All-Optical 2R Regeneration With Contrast Enhancement in a Reflective Vertical Cavity Quantum-Wells Saturable Absorber

Reflective vertical cavity semiconductor saturable absorber for functional operations with thermal limitations and saturable index change

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