2014
DOI: 10.1134/s0020168514050100
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Effect of Sb content on the phase composition of CoSb x nanofilms grown on a heated substrate

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(2 citation statements)
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“…MBE is a novel method for the epitaxial preparation of thin film materials and has also been used in recent years for the preparation of skutterudite TE thin film materials [67][68][69][70][71]. MBE is a novel process for coating on substrates under ultra-high vacuum.…”
Section: Molecular Beam Epitaxy (Mbe)mentioning
confidence: 99%
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“…MBE is a novel method for the epitaxial preparation of thin film materials and has also been used in recent years for the preparation of skutterudite TE thin film materials [67][68][69][70][71]. MBE is a novel process for coating on substrates under ultra-high vacuum.…”
Section: Molecular Beam Epitaxy (Mbe)mentioning
confidence: 99%
“…In addition, the smaller grain size of the films prepared at higher substrate temperatures allows for lower thermal conductivity. Makogon et al [71] investigated the phase composition and crystal structure of CoSb x (1.82 ≤ x ≤ 4.16) nanofilms grown on oxidized single-crystal silicon substrates using MBE at 200 • C. It was found that increasing the percentage of Sb in CoSb x produced different substances (Figure 10b): when the content of Sb was 64.5%, the films consisted of CoSb 2 ; when the content of Sb was 64.5% to 75%, the films consisted of CoSb 2 and CoSb 3 ; when the content of Sb was 75%, the films consisted of CoSb 3 ; when the content of Sb exceeded 75%, the films consisted of CoSb 3 and Sb. Figure 10c presents the resistivity of the skutterudite films with different Sb contents.…”
Section: Molecular Beam Epitaxy (Mbe)mentioning
confidence: 99%