Effect of seed layer on the growth of well-aligned ZnO nanowires

Ji, Liang‐Wen; Peng, Shiming; Wu, Junsheng; Shih, Wei-Shun; Tang, I‐Tseng

doi:10.1016/j.jpcs.2009.07.029

Cited by 112 publications

(62 citation statements)

References 15 publications

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“…Electrical characteristics were then compared between as-grown and vacuum-annealed L-NW photosensors. The details of the seed layer and NWs processes have been reported in our previous study [10].…”

Section: Methodsmentioning

confidence: 99%

Characterization of self-assembled ordered ZnO nanowire networks applied to photodetection

Peng

2012

Microelectronic Engineering

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Section: Methodsmentioning

confidence: 99%

Characterization of self-assembled ordered ZnO nanowire networks applied to photodetection

Peng

2012

Microelectronic Engineering

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“…Finally, ZnO NW networks were synthesized by hydrothermal decomposition method. The details of the seed layer and ZnO NW growth processes were reported by the authors in a previous study [10]. The channel width and length are 40 and 8 μm, respectively.…”

Section: Methodsmentioning

confidence: 99%

Semitransparent Field-Effect Transistors Based on ZnO Nanowire Networks

Peng

et al. 2011

IEEE Electron Device Lett.

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This investigation demonstrates the fabrication of semitransparent field-effect transistors with self-assembling ordered ZnO nanowire (NW) networks, using a high-k HfO 2 gate. The devices exhibit excellent optical transparency and transistor performance at on/off ratios of > 10 5 , a mobility of ∼7.59 cm 2 · V −1 · s −1 , and threshold voltages of ∼4 V. Under UV illumination (3.65 eV), the devices exhibit the highest relative photoconductivity (∼2.08 × 10 5 ), corresponding to a photoresponsivity of 3.96 A/W at low operating voltages (V GS = 0 V and V DS = 1 V). The result suggests that the NW-based devices have low power consumption and high photosensivity when used in photodetection.Index Terms-Field-effect transistors (FETs), photoconductivity, ZnO nanowire (NW).

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“…These results are in good agreement with the PL observation. Furthermore, Ji et al and Dai et al have reported that if the concentration of the oxygen vacancies and interstitial oxygen ions is reduced in the synthesized products, a sharp and strong intensity NBE, and a short or suppressed green emission appear [40]. Therefore, the intensity ratio of UV to green emission is larger for the NWs in our study than those obtained from ZnO nanocrystals grown by hydrothermal [41], vapor-liquid-solid [42], CVD [43], chemical vapor transport and condensation [44], and electrochemical methods [45], suggesting that the ZnO NWs prepared in our work are good in crystallinity with very less structural defects.…”

Section: Characterizationmentioning

confidence: 99%

CATALYST–FREE GROWTH OF WELL–ALIGNED ZnO NANOWIRES ON GRAPHENE/Si SUBSTRATEBY THERMAL EVAPORATION

Khai¹

2018

JST

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Vertically well-aligned ZnO nanowire (NW) arrays with high density were directly synthesized on graphene/Si substrate by thermal evaporation of zinc powder without catalysts or additives. The ZnO NWs were characterized by field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), photoluminescence (PL), and Raman spectroscopy. The results showed that the obtained ZnO NWs have diameters in the range of 300-350 nm with lengths of several tens micrometers. The prepared ZnO NWs are of a single crystal, which have a hexagonal wurtzite crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The NW arrays had a good crystal quality with excellent optical properties, indicating a sharp and strong ultraviolet emission at 380 nm, and a weak visible emission at around 516 nm.

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Effect of seed layer on the growth of well-aligned ZnO nanowires

Cited by 112 publications

References 15 publications

Characterization of self-assembled ordered ZnO nanowire networks applied to photodetection

Characterization of self-assembled ordered ZnO nanowire networks applied to photodetection

Semitransparent Field-Effect Transistors Based on ZnO Nanowire Networks

CATALYST–FREE GROWTH OF WELL–ALIGNED ZnO NANOWIRES ON GRAPHENE/Si SUBSTRATEBY THERMAL EVAPORATION

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