Effect of Self‐Seed Inducing on the Growth Mechanism and Photovoltaic Performance of Cu₂ZnSnSe₄ Thin Films

Abstract

Thin-film photovoltaic (PV) devices based on kesterite Cu 2 ZnSnSe 4 (CZTSe) and Cu 2 ZnSnS 4 (CZTS) materials have attracted considerable interest as one of the promising candidates for PV plants because of their suitable direct band gap (1.0 eV for CZTSe and 1.5 eV for CZTS) and high absorption coefficient (10 4 -10 5 cm À1 ) for achieving high performance, as well as nontoxic and earthabundant raw material sources. [1][2][3][4][5][6] So far, encouraging power conversion efficiencies of 12.6% and 12.5% have been achieved for Cu 2 ZnSn (SSe) 4 (CZTSSe) and CZTSe solar cells, respectively, indicating the huge potential of these PV materials to satisfy the demand for cost-effective and green solar electricity. [7][8][9] However, there is a large gap between the record efficiency and detailed balance limiting efficiency, possibly owing to the narrow phase stability field, loss of Sn during heat treatment, and a range of potentially detrimental defects. [10][11][12][13][14][15][16][17] These factors make it difficult to control the stoichiometry and phase purity, leading

Enhanced photoresponse of Cu2ZnSnS4 absorber thin films fabricated using multi-metallic stacked nanolayers

“…It comprises a less hazardous substance, S, rather than Se, and has a direct bandgap energy of about 1.5 eV and a strong absorption coefficient >10 4 cm −1 in the visible area. [8][9][10][11][12][13] In recent years, by enhancing the synthesis and manufacturing procedure, CZTS-based solar cells' efficiency rose from 0.66% to 12.6%. [14][15][16] Various deposition techniques, solution-based and vacuum process based, [17][18][19][20][21][22] can be used to fabricate CZTS thin lms.…”

“…However, we are far beyond the theoretically predicted efficiency, possibly owing to the small phase stability eld, high series resistance, and Mo-CZTS interface recombination due to MoS 2 formation during sulfurization, Sn loss during heat treatment/sulfurization, and a range of potentially detrimental defects, etc. 6,11,23,28,29 All these causes make it difficult to obtain a pure phase, controlled stoichiometry, and introduction of various secondary phases during the formation of CZTS thin lms. 25,30 Consequently, the enhancement in the photoresponse of kesterite absorbers is restricted.…”

“…It comprises a less hazardous substance, S, rather than Se, and has a direct bandgap energy of about 1.5 eV and a strong absorption coefficient >10 4 cm −1 in the visible area. 8–13 In recent years, by enhancing the synthesis and manufacturing procedure, CZTS-based solar cells' efficiency rose from 0.66% to 12.6%. 14–16…”

Positive Role of Inhibiting CZTSSe Decomposition on Intrinsic Defects and Interface Recombination of 12.03% Efficient Kesterite Solar Cells

“…[10][11][12][13][14][15][16] At present, the homogeneous distribution of elements during CZTSSe synthesis is considered as a key factor to improving the photovoltaic performance of the CZTSSe device. [17][18][19][20] The homogeneous distribution of elements provides a stable and suitable chemical environment, which could significantly decrease the density of the intrinsic defects and the interface recombination. However, CZTSSe is known to decompose under the high selenization temperature.…”

Theoretical Modeling of Perovskite–Kesterite Tandem Solar Cells for Optimal Photovoltaic Performance

“…The presence of defects adversely influences the surface potential and band bending of the light absorber, resulting in recombination of charge carriers. [17,18] In spite of these drawbacks, a number of modeling studies have been done on CZTSe solar cells and a high PCE of 12.6% was reported through an experimental study. [19] A modeling study performed on CZTSe solar cell recently furnished a high optimized PCE of 18.63%.…”