Effect of Si and Er Co-doping on Green Electroluminescence from GaN:Er ELDs

Abstract

ABSTRACT(Er, Si) co-doped GaN thin films were grown on Si substrates by molecular beam epitaxy (MBE) technique. Electroluminescent devices (ELDs) were fabricated and the effect of Si codoping on the performance of GaN devices was studied. Previous results with GaN:Er ELDs reported that electroluminescence (EL) was much stronger in reverse bias than in forward bias condition, indicating that the dominant factor in EL intensity was the electric field. The results reported here show the first time GaN:Er ELDs where forward bias EL is very much larger, indicating that the dominant factor is forward bias current. The electrical properties of (Si, Er) co-doped GaN thin films are believed to be responsible for the current control mechanism.

Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition

“…This would explain why, as GaN:Er growth pressure increases, the intensity of 1.05 µm emission decreases, and the 1.54 µm emission becomes stronger. Under forward bias, the intra-4f transitions of Er 3+ are predominantly induced by the energy transfer from the electron-hole pairs generated through band edge excitation via current injection [18]. The results suggest that the competitive non-radiative recombination rate increased due to the formation of more impurities and defects under low growth pressure (<10 torr) or high growth pressure (>30 torr), which may limit the number of excited Er 3+ centers and hence the 1.54 µm emission.…”

Injection Laser Using Rare Earth Doped GaN Thin Films for Visible and Infrared Applications

“…Such temperature quenching has been demonstrated to be inversely proportional to the host material's energy bandgap [7]. Wide bandgap II-VI semiconductors [8][9][10] [12] Green emission from GaN:Er/Si [13] Green electroluminescence from GaN:Er schottky barrier diodes [14] Visible and IR electroluminescence from GaN:Er/Si schottky diodes [15] Red luminescence from GaN:Pr/Si [16] Red luminescence from GaN:Eu/Si [17] Blue luminescence from GaN:Tm/Si [18] RGB colors display from GaN:RE [19] Turquoise emission from GaN:(Er+Tm) [19] Yellow or orange emission from GaN:(Eu+Er) [20] Low voltage GaN:Er electroluminescent devices [21] Multiple color capability from GaN:RE [19,22,23] Electroluminescence from GaN:Er under AC bias [24] Room-temperature-grown GaN:RE [25] Switchable color GaN:RE electroluminescent devices [26] GaN:RE phosphor thick film dielectric electroluminescent device [27][28][29] Optimization of GaN:Er growth condition [30][31][32] Lateral color integration of GaN:RE [33] Three-color integration of GaN:RE [34] Enhanced blue emission from Al x Ga 1-x N:Tm [35] Stimulated emission from GaN:Eu [36] Enhanced red emission from GaN:Eu by interrupted growth epitaxy [37] Visible laser from GaN:Eu/Si [38] Prospects of GaN:RE/Si lasers research [39] GaN:RE ELDs emission mechanism controlled by Si co-doping [40] Enhanced Eu red emission in GaN:Eu by Si co-doping [41] Optimization of GaN:Eu growth condition [42] Enhanced Eu ferromagnetism from GaN:Eu by Si co-doping [43] Enhanced Eu red emission from Al x Ga 1-x N:Eu [44] Green visible emission from Er doped GaN on sapphire substrate...…”