Effect of solution flow on the properties of tin dioxide SnO2 thin films deposited by spray pyrolysis technique

Khelifi, Chafia; Attaf, A.; Saïdi, H.; Yahia, A.; Dahnoun, Mohamed; Saadi, Aïcha

doi:10.1016/j.ijleo.2016.09.060

Cited by 17 publications

(12 citation statements)

References 20 publications

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“…In recent years, transparent conducting oxides (TCO) such as tin doped indium oxide In2O3: Sn (ITO), antimony doped tin oxide SnO2: Sb (ATO), fluorine doped tin oxide SnO2: F (FTO) are very promising materials [1][2][3] because of their dual properties: good electrical conductivity and high optical transparency in the visible region [4] . These properties make these materials ideal candidates for photovoltaic applications [5][6][7] .…”

Section: Introductionmentioning

confidence: 99%

Study of Mn doping on the Structural, Optoelectronic and Photoluminescence Properties of F-Doped SnO<sub>2</sub> Sprayed Thin Films for Optoelectronic Applications

Houaidji¹,

Ajili

Chouial³

et al. 2020

JNanoR

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The aim of this work is the production and the characterisation of (SnO2: (Mn, F)) thin films with appropriate optoelectronic properties required for application as ohmic contacts in photovoltaic application devices. Transparent conducting Manganese-fluorine co-doped tin oxide (SnO2: (Mn, F)) thin films have been deposited onto preheated glass substrates using the chemical spray pyrolysis (CSP) method. The ([Mn2+]/[Sn4+]) atomic concentration ratio (y) in the spray solution is varied between 0 and 8 at. %. The structural, the opto-electrical and the photoluminescence properties of these thin films have been studied. It is found that the deposited thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating the thickness uniformity and the surface homogeneity of the deposited samples. Photoluminescence behaviour of Mn-F co-doped SnO2 thin films was also studied. Photoluminescence spectra reveal the presence of the defects like oxygen vacancies in the materials. In addition, The electrical resistivity, volume carrier concentration, surface carrier concentration and electrical mobility were determined from Hall Effect measurements and the following results were obtained: n-type conductivity in all the deposited thin films, a low resistivity of 1.50×10-4 Ω cm, and a high electrical mobility of 45.40 cm2 V-1 s-1 with Mn co-doping concentration equals to 7 at. %. These experimental results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contacts in photovoltaic applications devices.

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Section: Introductionmentioning

confidence: 99%

Study of Mn doping on the Structural, Optoelectronic and Photoluminescence Properties of F-Doped SnO<sub>2</sub> Sprayed Thin Films for Optoelectronic Applications

Houaidji¹,

Ajili

Chouial³

et al. 2020

JNanoR

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“…In addition a decrease in grain size up to 7 nm was observed following the increase of solution concentration, solution flow and PH values [10][11]13].…”

Section: Structural Characterizationmentioning

confidence: 92%

“…In the recently years, some researchers have examined the physical properties of SnO2 thin films prepared by spray pyrolysis technique. This researchers have studied the effect of solution flow, solution concentration, temperature and PH values on the properties of undoped SnO2 thin films [10][11][12][13].…”

Section: The Relationship Between Processing and Structural Optical E...mentioning

confidence: 99%

The relationship between processing and structural, optical, electrical properties of spray pyrolysed SnO2 thin films prepared for different deposition times

Yahi

Bouzidi

Miloua

et al. 2019

Optik

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“…In this work, we will be presenting tin oxide SnO 2 known under the name of cassiterite in natural state, which is crystallized in the tetragonal crystalline structure [7], belonging to the P42/mnm space group [19]. It is an ntype semiconductor [20,21] and is the first transparent conductor widely marketed. In addition, it has a large band gap energy value varying between 3.6 and 4 eV [7,16,19].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, it has a large band gap energy value varying between 3.6 and 4 eV [7,16,19]. Due to its properties such as low electrical resistivity, high optical transmittance [12,21], and the big reflectivity in the infrared region, it can be used as, although anode in lithium-based batteries, a conductive electrode of thin layers of photovoltaic cells. The SnO 2 thin layers have been extensively prepared by employing different procedures like dual-beam pulsed laser deposition (DB-PLD) [22], spray pyrolysis [23], magnetron sputtering [24], molecular beam epitaxy (MBE) [25], and sol-gel method [26], which will be used with the spin coating to prepare our thin films; the reason this was chosen was because of its several advantages: its simplicity, low cost, and its ability to generally obtain uniform films with good adherence and reproducibility [27].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Nickel and Aluminum-Codoped SnO2 Thin Films for Optoelectronic Applications

Bouabdalli

Jouad

Garmim

et al. 2021

International Journal of Photoenergy

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In this study, the coating technique was used to prepare thin layers of nickel and aluminum-codoped tin oxide (SnO2: Ni; Al). This study is aimed at exploring the influence of aluminum (Al) dopant on the structural, optical, and electrical properties of the elaborated films. X-ray diffraction (XRD) studies discovered that all deposited films (Ni-doped and Al-Ni-codoped SnO2) were polycrystalline with tetragonal (quadratic) structure and exhibited [110] preferential orientation. The optical measurements exposed that all prepared films have presented good transparency. The transmittance of Ni-Al-codoped SnO2 thin films in the visible and near-infrared regions varied between 80% and 90%; this was dependent on the concentration of dopant. The band gap was determined via the equation related to the absorption coefficient. It was deduced that the optical band gap values of thin films gradually decreased from 4.084 eV to 3.991 eV, as an effect of Al content. In addition, it was concluded that the thickness values of the films pass from 571.374 nm to 694.036 nm as an effect of Al content. Moreover, the extinction coefficient decreases with the wavelength in the UV region and then varies slightly towards longer wavelengths. Moreover, the electrical resistivity was determined using the four-point probe; it was determined that the electrical resistivity decreases from 1.35 × 10 3 Ω · cm to 0.14 × 10 3 Ω · cm with aluminum concentration increasing from 0 at. % to 7 at. %. The elaborated films of SnO2 codoped with Ni and Al present were highly transparent; therefore, these thin layers look promising in the use of the window layer in PV solar cells.

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Effect of solution flow on the properties of tin dioxide SnO2 thin films deposited by spray pyrolysis technique

Cited by 17 publications

References 20 publications

Study of Mn doping on the Structural, Optoelectronic and Photoluminescence Properties of F-Doped SnO<sub>2</sub> Sprayed Thin Films for Optoelectronic Applications

Study of Mn doping on the Structural, Optoelectronic and Photoluminescence Properties of F-Doped SnO<sub>2</sub> Sprayed Thin Films for Optoelectronic Applications

The relationship between processing and structural, optical, electrical properties of spray pyrolysed SnO2 thin films prepared for different deposition times

Preparation and Characterization of Nickel and Aluminum-Codoped SnO2 Thin Films for Optoelectronic Applications

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