Effect of solvent volume on properties of SnO₂:Al films

Abstract

Aluminium doped tin oxide films (ATO) were deposited from starting solutions having different solvent volumes (10, 20, …, 50 mL), using a simplified spray pyrolysis technique and the effect of solvent volume on the structural, optical and electrical properties was investigated. Structural studies revealed that Al 3z incorporation into the Sn 4z sites of the SnO 2 lattice is gradually increased with increasing solvent volume. The variation in the preferential orientation factor f (110) as a function of solvent volume is discussed in detail. From electrical studies, it is found that the sheet resistance R sh is minimum (3?98 kV sq 21 ) when the solvent volume is minimum, and R sh increases as the volume of the solvent increases. The gradual decline in the intensity of the peak at 411 nm of the photoluminescence spectra indicated the decrease in the density of oxygen vacancies. The optical transmittance in the visible region is higher (85%) for higher solvent volume.

SnO2 Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties

“…The overall lattice parameter is thus expected to decrease as more Al ions occupy the Sn sites, as indeed observed experimentally, see Figure 5b. Similar observations have been reported by Lee et al [27] for Al content in the film (atomic %) varing from 0 to 8.2%, Ravichandran et al [34] with Al concentration in the starting solution increasing from 0–30 atomic %, and Thirumurugan et al [43] for 3 atomic % doping. In addition, the broadening of the XRD peaks indicates a diminution of crystal sizes.…”

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

“…where Al Sn − represents the Sn 4+ site substituted by Al 3+ . A similar finding also has been reported by Thirumurugan et al 32 They also found a relatively low electron concentration for the low Al-doping concentration Al-doped SnO 2 (Al content between 6.7% and 13%) thin films. Again, it supports the above conclusion that the hole carriers generated by the Al 3+ −Sn 4+ substitution reactions would compensate free electrons generated by the intrinsic defects, i.e., oxygen vacancy.…”

Study of p-type AlN-doped SnO2 thin films and its transparent devices

“…The hole carriers generated by the Al 3+ -Sn 4+ substitution reaction compensated for the free electrons contributed by the oxygen vacancies. 32 Thus, the electron carrier concentration of the n-type Al-doped SnO 2 thin films slightly decreased as the Al doping content increased. However, the hole carriers generated by the Al 3+ -Sn 4+ substitution were insufficient to convert the carrier polarity of the Al-doped SnO 2 thin films from n-type to p-type.…”