“…The current density increases with an average increase in majority carrier concentration and the highest current levels are achieved in the highest doped 5% GZRs. The electrical characteristics of our samples are comparable with the electrical characteristics of sol-gel spin-coated Al-doped ZnO films [ 43 ]. It is affirmed that the electrical behavior is a carrier concentration-dependent direct response of GZRs rather than an increase or decrease in morphology-induced surface-to-volume ratio.…”
Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH− ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.
“…The current density increases with an average increase in majority carrier concentration and the highest current levels are achieved in the highest doped 5% GZRs. The electrical characteristics of our samples are comparable with the electrical characteristics of sol-gel spin-coated Al-doped ZnO films [ 43 ]. It is affirmed that the electrical behavior is a carrier concentration-dependent direct response of GZRs rather than an increase or decrease in morphology-induced surface-to-volume ratio.…”
Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH− ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.
“…Such smaller sized ZnO grain formations in ethanol solvents further supported the choice of ethanol being the suitable solvent for ZnO-Nanorod synthesis since smaller sized grains can account for large total surface coverage. Hence, improving the electrical conductance of the ZnO-Nanorods by facilitating better grain to grain transfer of electrons 21 .Figure 5Diagram of morphological and surface analysis of ZnOAu-Nanorods layers. ( A ) FESEM images of hydrothermally grown ZnO-Nanorods.…”
Detection of host integrated viral oncogenes are critical for early and point-of-care molecular diagnostics of virus-induced carcinoma. However, available diagnostic approaches are incapable of combining both cost-efficient medical diagnosis and high analytical performances. To circumvent this, we have developed an improved IDE-based nanobiosensor for biorecognition of HPV-16 infected cervical cancer cells through electrochemical impedance spectroscopy. The system is fabricated by coating gold (Au) doped zinc oxide (ZnO) nanorods interfaced with HPV-16 viral DNA bioreceptors on top of the Interdigitated Electrode (IDE) chips surface. Due to the concurrently improved sensitivity and biocompatibility of the designed nanohybrid film, Au decorated ZnO-Nanorod biosensors demonstrate exceptional detection of HPV-16 E6 oncogene, the cancer biomarker for HPV infected cervical cancers. This sensor displayed high levels of sensitivity by detecting as low as 1fM of viral E6 gene target. The sensor also exhibited a stable functional life span of more than 5 weeks, good reproducibility and high discriminatory properties against HPV-16. Sensor current responses are obtained from cultured cervical cancer cells which are close to clinical cancer samples. Hence, the developed sensor is an adaptable tool with high potential for clinical diagnosis especially useful for economically challenged countries/regions.
“…Moreover, some solvent mixtures (2‐ME/acetic acid, 2‐ME/isopropanol, and ethanol/water) have been reported. Nevertheless, it should be considered that the chosen solvent influences the final properties [ 206 ] of the films such as structural, morphological, optical, and electrical due to its evaporation rate, [ 207 ] its interaction with the metal salt precursor, its composition and its chain size.…”
Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning
confidence: 99%
“…Moreover, some solvent mixtures (2-ME/acetic acid, 2-ME/isopropanol, and ethanol/water) have been reported. Nevertheless, it should be considered that the chosen solvent influences the final properties [206] of the films such as structural, morphological, optical, and electrical due to its evaporation rate, [207] its interaction with the metal salt precursor, its composition and its chain size. Another key feature in the solution synthesis is the addition of a stabilizer, i.e., a chelating agent, in the precursor solution, with the most commonly used in solution-based oxide RRAM being monoethanolamine (MEA) [115] and diethanolamine (DEA).…”
Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.
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