“…TiO2 as N-type semiconducting material has wide band gap with indirect energy band gap of 3.2 eV (anatase) and 3.02 eV (rutile) [6]. Several methods employed in preparation of TiO2 films include electron-beam evaporation [7,8], sputtering [9], sol-gel and dip coating, chemical vapour deposition [10] and spin-coating process [11][12][13]. Among the methods used, spin-coating offers advantages of low temperature processing, low cost, ease of coating large area and suitable for porous film preparation.…”