Effect of sputtered films on morphology of vertical aligned ZnO nanowires

Kar, Jyoti Prakash; Lee, S.W.; Lee, W.; Myoung, Jae Min

doi:10.1016/j.apsusc.2008.04.046

Cited by 18 publications

(6 citation statements)

References 52 publications

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“…The predominant ZnO (0 0 2) peak in Fig. 3A manifested that the as-prepared ZnO NRs have high crystallinity with a hexagonal structure [46,47]. Moreover, the strong intensity of the (0 0 2) peak shows that the ZnO NRs were well oriented with the c-axis perpendicular to the ITO substrate, which was consistent with the cross-section SEM analysis.…”

Section: X-ray Diffraction Characterizationsupporting

confidence: 84%

Effects of morphology of nanostructured ZnO on direct electrochemistry and biosensing properties of glucose oxidase

Zhai

Chen

et al. 2011

Journal of Electroanalytical Chemistry

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Section: X-ray Diffraction Characterizationsupporting

confidence: 84%

Effects of morphology of nanostructured ZnO on direct electrochemistry and biosensing properties of glucose oxidase

Zhai

Chen

et al. 2011

Journal of Electroanalytical Chemistry

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“…The former was intrinsic stress due to the lattice mismatch between the film and substrate materials, while the latter was thermal stress due to the thermal expansion coefficient mismatch between them. It was reported that the former factor played a major role in tuning the properties of the films [16].…”

Section: As Shown Inmentioning

confidence: 99%

Influence of substrate metals on the crystal growth of AlN films

Xiong

et al. 2010

Int J Miner Metall Mater

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AlN films were deposited by reactive radio frequency (RF) sputtering on various bottom electrodes, such as Al, Ti, Mo, Au/Ti, and Pt/Ti. The effects of substrate metals on the orientation of AlN thin films were investigated. The results of X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy show that the orientation of AlN films depends on the kinds of substrate metals evidently. The differences of AlN films deposited on various metal electrodes are attributed to the differences in lattice mismatch and thermal expansion coefficient between the AlN material and substrate metals. The AlN film deposited on the Pt/Ti electrode reveals highly the c-axis orientation with well-textured columnar structure. The positive role of the Pt/Ti electrode in achieving the high-quality AlN films and high-performance film bulk acoustic resonator (FBAR) may be attributed to the smaller lattice mismatch as well as the similarity of thermal expansion coefficient between the deposited AlN material and the Pt/Ti electrode substrate.

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“…The structural studies of ZnO nanowires grown on Si substrates are reported elsewhere [18]. The bright-field (BF) TEM images of ZnO nanowires in microchannel are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%